Results 61 to 70 of about 13,067 (227)

A quarterly update on what's happening in the field of ferroelectricity [PDF]

, 2002
The Ferroelectricity Newsletter intends to meet expectations by providing information about upcoming meetings worldwide, highlights of recently held conferences, lists of papers to be published in proceedings, reports on research, patents, and other ...

core   +1 more source

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Electronic Materials, 2023
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini, Benoît Manchon, Ingrid Cañero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin   +11 more
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Interlayer-Sliding-Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO₂Zn₂F₂ Bilayer. [PDF]

Adv Sci (Weinh)
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Bezzerga D, Khan I, Ahmad GS, Hong J.
europepmc   +2 more sources

Diverse Landscape of Tunable Magnetic, Topological, and Ferroelectric States in 2D Ti₃Se₃Te₂. [PDF]

Adv Sci (Weinh)
Ti3Se3Te2 emerges as a multifunctional 2D van der Waals platform. The monolayer is a dynamically stable ferromagnetic quantum anomalous Hall insulator. In bilayers, two stacking configurations yield distinct phases: AA‐stacking hosts an altermagnetic quantum spin Hall insulator, while AA′‐stacking exhibits three‐state in‐plane ferroelectricity ...
Yu J, Bai J, Yang Y, Qian S, Wang X, Liu Z.   +5 more
europepmc   +2 more sources

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Electronic ferroelectricity in monolayer graphene moiré superlattices

Nature Communications
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices.
Le Zhang, Jing Ding, Hanxiao Xiang, Naitian Liu, Wenqiang Zhou, Linfeng Wu, Na Xin, Kenji Watanabe, Takashi Taniguchi, Shuigang Xu   +9 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Recipes for improper ferroelectricity in molecular perovskites

Nature Communications, 2018
In layered inorganic materials lattice distortions can couple to break inversion symmetry and drive improper ferroelectricity, but in perovskites, symmetry prohibits such an effect.
Hanna L. B. Boström, Mark S. Senn, Andrew L. Goodwin   +2 more
doaj   +1 more source

Bulk‐Like Spin Cycloid and Fast Switching in Freestanding BiFeO3

Advanced Functional Materials, EarlyView.
Freestanding BiFeO3 membranes overcome substrate‐induced constraints by simultaneously restoring the intrinsic bulk‐like spin cycloid and enabling ≈50% faster ferroelectric switching than substrate‐clamped epitaxial thin films. This combination of robust noncollinear antiferromagnetic order and efficient electric‐field switching establishes ...
Pratap Pal, Xiaoxi Deng, Gi‐Yeop Kim, Kyoungjun Lee, Jheng‐Cyuan Lin, Prithwijit Mandal, Jiangfeng Yang, Paul Steadman, Pascal Manuel, Roger D. Johnson, Si‐Young Choi, Paolo G. Radaelli, Chang‐Beom Eom   +12 more
wiley   +1 more source