Results 161 to 170 of about 15,250 (308)
Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very
Tagantsev, Alexander +2 more
core +1 more source
Zero Thermal Expansion and Local Structure in KxMnxFe2‐xMo3O12‐Based Materials
Local structure engineering via ion insertion drives local structural transformation from low‐symmetry P21/a to high‐symmetry R‐3c, enhancing structural flexibility and realizing a transition from positive thermal expansion to wide‐temperature‐range zero thermal expansion in KxMnxFe2‐xMo3O12‐based materials.
Gongsen He +13 more
wiley +1 more source
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao +14 more
wiley +1 more source
Reconfigurable and nonvolatile photo-pyroelectricity in a ceramic-like biaxial molecular ferroelectric via polarization engineering. [PDF]
Tang L +6 more
europepmc +1 more source
Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee +9 more
wiley +1 more source
Revival of Layered Ferroelectrics in Thin Films. [PDF]
Gradauskaite E.
europepmc +1 more source
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen +8 more
wiley +1 more source
Grain Size-Dependent Defect and Domain Evolution in Lead Titanate-Based Relaxor Ferroelectrics. [PDF]
Zhang H +7 more
europepmc +1 more source
Stress‐to‐Light Conversion in an Earth‐Abundant Oxide Semiconductor
Stress‐to‐light conversion in solids represents a unique photonic functionality, yet it has never been realized in a chemically simple and sustainable material. Here, we show that sustainable semiconductor ZnO exhibits strong near‐infrared (NIR) luminescence under elastic stress when defect‐engineered to stabilize the p‐type state.
Tomoki Uchiyama +7 more
wiley +1 more source
A Metal-Free Molecular Ferroelectric With Large Piezoelectricity and Its Porous Composite for Superior Output Power Density. [PDF]
Chen N, Wei W, Ye L, Wan L, Wei Y.
europepmc +1 more source

