Results 161 to 170 of about 44,734 (286)

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization- and Defect-Mediated Switching in Hafnia Ferroelectrics. [PDF]

Adv Sci (Weinh)
Koo RH, Im J, Hwang J, Park SH, Ko J, Choi K, Ryu S, Jung G, Lee JH.   +8 more
europepmc   +1 more source

Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films

Advanced Electronic Materials, EarlyView.
ABSTRACT Understanding photoinduced phenomena in complex oxides is crucial for developing next‐generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light‐induced photoconductivity in epitaxial PrBa1‐xCaxCo2O5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition.
Yanbin Chen, Yiqun Liu, Xing Xu, Jing Ma, Ce‐wen Nan, Chonglin Chen   +5 more
wiley   +1 more source

Direct observation of cation-dependent polarisation switching dynamics in fluorite ferroelectrics. [PDF]

Nat Commun
Ooe K, Shen Y, Shitara K, Maki R, Kobayashi S, Shimakawa Y, Kan D, Etheridge J.   +7 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Constructing a photoferroelectric semiconductor by regulating non-covalent interactions through halogen substitution. [PDF]

Chem Sci
He Y, Wu S, Li X, Wang Q, Zhao R, Pan L, Qin C, Zhang XM, Fu D.   +8 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Organic-inorganic perovskite ferroelectric catalytic selective alkyne coupling under ultrasound sonication. [PDF]

Chem Sci
Qi JC, Chen XG, Wang ZY, Tang YY, Song XJ, Qin Y, Lv HP, Xiong RG, Liao WQ.   +8 more
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Write cycling endurance exceeding 10¹⁰ in sub-50 nm ferroelectric AlScN. [PDF]

Nat Commun
Cho H, Wang Y, Leblanc C, Zhang Y, He Y, Han Z, Tong X, Bulumulla VD, Tan J, Olsson RH, Jariwala D.   +10 more
europepmc   +1 more source