Molecular-driven lead-free halide photoferroelectric solid solution for high-temperature sensitive self-powered x-ray detection. [PDF]
Xu L +10 more
europepmc +1 more source
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
Thermally Stable HfO<sub>2</sub>-Based Ferroelectric Transistors for CMOS-Compatible Energy-Efficient Neuromorphic Integrated Circuits. [PDF]
Tikhonenko FV +4 more
europepmc +1 more source
Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao +6 more
wiley +1 more source
Halogen Engineering Achieving Regulable Polar Axes and Large Spontaneous Polarization in Mixed-Cation Metal Halide Hybrid Multiferroics. [PDF]
Shen LH +9 more
europepmc +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Improper geometric ferroelectricity at the monolayer limit. [PDF]
Li YE +22 more
europepmc +1 more source
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu +6 more
wiley +1 more source
Engineering Small-Molecule Proton-Transfer Ferroelectrics by Crystal Structure Prediction: Design Limits at the Salt-Cocrystal Boundary. [PDF]
Seyedraoufi S +4 more
europepmc +1 more source
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga +3 more
wiley +1 more source

