Results 191 to 200 of about 44,485 (284)

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Resolving the On-Off Ratio Discrepancy in Bilayer 3R-MoS₂ FeSFETs: Dual Mechanisms of Domain Wall Engineering. [PDF]

Nano Lett
Teh YH, Jeng HT.
europepmc   +1 more source

Proximity Ferroelectricity in Compositionally Graded Structures

Advanced Electronic Materials, EarlyView.
We perform the finite element modeling of the polarization switching in the compositionally graded AlN‐Al1‐xScxN and ZnO‐Zn1‐xMgxO structures and reveal the switching of spontaneous polarization in the whole structure in all these systems. The coercive field to switch is significantly lower than the electric breakdown field of the unswitchable AlN and ...
Eugene A. Eliseev, Anna N. Morozovska, Sergei V. Kalinin, Long‐Qing Chen, Venkatraman Gopalan   +4 more
wiley   +1 more source

Boosts in Polarization and Piezoelectric Responses of Lead-Free Ferroelectrics through Strain-Enhanced Glassy Coexistent Polars with High Dynamics. [PDF]

Adv Sci (Weinh)
He L, Zhang L, Zhang L, Ran Y, Chen Z, Liang C, Hao Y, Li J, Xu Z, Yang S, Carpenter MA, Ren X, Wang D.   +12 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Non-steady-state optothermal electromotive force in relaxor ferroelectrics. [PDF]

Sci Rep
Bryushinin MA, Lushnikov SG, Sokolov IA.
europepmc   +1 more source

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

Advanced Electronic Materials, EarlyView.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani   +21 more
wiley   +1 more source

Giant intrinsic electrocaloric effect in ferroelectrics by local structural engineering. [PDF]

Nat Commun
Wu B, Tao H, Chen K, Xing Z, Wu YQ, Thong HC, Zhao L, Zhao C, Xu Z, Liu YX, Yao FZ, Zhou T, Ma J, Wei Y, Wei Y, Wang K, Zhang S.   +16 more
europepmc   +1 more source

Recycled Piezoelectric Materials with Competitive Second‐Life Functional Properties

Advanced Electronic Materials, EarlyView.
The essential piezoelectric ceramics with heavy ecological footprints are not sufficiently recycled. This work demonstrates the feasibility of recycling different types of piezoelectric ceramics using different binders, where the terpolymer binder with relatively large permittivity facilitated superior retention of properties after recycling, promoting
Mohadeseh Tabeshfar, Sivagnana Sundaram Anandakrishnan, Yang Bai   +2 more
wiley   +1 more source

In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe_1-xS_x van der Waals semiconductors. [PDF]

Proc Natl Acad Sci U S A
Sutter E, Sutter P.
europepmc   +1 more source