Results 201 to 210 of about 44,485 (284)

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Ferroelectric nanodot reservoir for neuromorphic computing. [PDF]

Beilstein J Nanotechnol
Razumnaya A, Tikhonov Y, Naidenko D, Boron L, Vinokur V, Lukyanchuk I.   +5 more
europepmc   +1 more source

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

Advanced Electronic Materials, EarlyView.
A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto an amphiphilic axle was incorporated into droplet interface bilayers (DIBs). Photoswitching between the azobenzene configurations on the ring resulted in cycling between memristive and memcapacitive behaviors in lipid bilayers, enabling programmable ...
P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García‐López, C. P. Collier   +4 more
wiley   +1 more source

Ferroelectric-like Polarization Switching in Plastic Crystalline Succinonitrile. [PDF]

J Am Chem Soc
Onodera N, Dekura S, Sato T, Mashiko M, Kurihara T, Mizuno M, Akutagawa T.   +6 more
europepmc   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Advanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +10 more
wiley   +1 more source

Structural Origin of Morphotropic Phase Boundary in Advanced Perovskite Ferroelectric Oxides. [PDF]

J Am Chem Soc
Yue Y, Qu F, Viola G, Han B, Krynski M, Honda T, Zheng Q, Hu Z, Abrahams I, Yan H.   +9 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Unveiling interfacial dead layer in wurtzite ferroelectrics. [PDF]

Nat Commun
Wang J, Li YQ, Wang R, Liu Q, Ye H, Wang P, Xu X, Yang H, Liu F, Sheng B, Yang L, Yin X, Tong Y, Wang T, Tong WY, Li XZ, Duan CG, Shen B, Wang X.   +18 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source