Results 221 to 230 of about 15,250 (308)

Quasi-Antipolar Nanoclusters Driven Superior Energy Storage in High-Entropy Relaxor Ferroelectrics. [PDF]

Adv Sci (Weinh)
Tian A, Li Z, Jiang Q, Wu X, Jiang X, Gao X, Er X, Mahmoud M, Rehman MU, Liu L, Xie A, Hu T, Zuo R.   +12 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Ferroelectricity through Reversible Anion-Relay Polarization Switching in a Two-Dimensional Metal-Organic Framework. [PDF]

J Am Chem Soc
Prajesh N, Kushwaha V, Singh CK, Sharma VB, Praveenkumar B, Steiner A, Ptak M, Kabra D, Zaręba JK, Boomishankar R.   +9 more
europepmc   +1 more source

Nonlinear Transverse Transport in a Ferromagnetic Polar Metal

Advanced Electronic Materials, EarlyView.
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha, Xuejin Zhang, Hao Liu, Jin Cao, Ruohan Chen, Jinfeng Zhai, Dingfu Shao, Shiwei Wu, Zhen Wang, Cong Xiao, Shengyuan A. Yang, Pan He, Hangwen Guo, Jian Shen   +13 more
wiley   +1 more source

Lead-Free (1 - <i>x</i>)Ba(Zr_0.2Ti_0.8)O₃ - <i>x</i>(Ba_0.7Ca_0.3)TiO₃‑Based Ferroelectrics with Diffuse Phase Transitions for Sustainable Electrocaloric Applications. [PDF]

J Phys Chem C Nanomater Interfaces
Banerjee K, Hu W, Wu Z, Tang X, Yan H.
europepmc   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

A Supramolecular Ferroelectric With Two Sublattices and Polarization Dependent Conductivity. [PDF]

Adv Sci (Weinh)
Mager H, Litterst M, Klubertz S, Haridas SV, Shyshov O, von Delius M, Kemerink M.   +6 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Hierarchical polar-nonpolar phase architecture enabling excellent lead-free capacitive energy storage. [PDF]

Chem Sci
Wu Q, Luo H, Hu Y, Huang Y, Guo X, Zhu H, Xu H, Jiang S, Li T, Xie B.   +9 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source