Results 231 to 240 of about 15,250 (308)
Field-Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α-In<sub>2</sub>Se<sub>3</sub>. [PDF]
Nahid SM +6 more
europepmc +1 more source
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li +4 more
wiley +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
A Perturbation Model of Gradient Energy Anisotropy for Phase-Field Simulation of Ferroelectrics. [PDF]
Shi X +7 more
europepmc +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Hysteresis Loops Design for Nanoporous Ferroelectrics. [PDF]
Huang X +5 more
europepmc +1 more source
Discretisation originated Peierls8211Nabarro barriers in simulations of ferroelectrics
Márton Pavel
core +1 more source
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source
Author Correction: Fluctuating local polarization: a generic fingerprint for enhanced piezoelectricity in Pb-based and Pb-free perovskite ferroelectrics. [PDF]
Yao Y +10 more
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source

