Results 241 to 250 of about 15,250 (308)

Bernoulli Principle in Ferroelectrics. [PDF]

Nanomaterials (Basel)
Razumnaya A, Tikhonov Y, Naidenko D, Linnik E, Lukyanchuk I.   +4 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Photo-/Electrocatalytic Reduction of CO₂ Based on Ferroelectrics. [PDF]

Research (Wash D C)
Wei R, Li S, Li A, Lin YH.
europepmc   +1 more source

Ferroelectrics

Journal of the Mineralogical Society of Japan, 1980
openaire   +2 more sources

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Phase-Engineered Non-Degenerate Sliding Ferroelectricity Enables Tunable Photovoltaics in Monolayer Janus In₂S₂Se. [PDF]

Adv Sci (Weinh)
Li Y, Wang Q, Han K, Liang Y, Kong K, Liang Y, Frauenheim T, Lv X, Guo D, Wang B.   +9 more
europepmc   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications. [PDF]

Adv Sci (Weinh)
Chi M, Zhang X, Liu J, Wang Y, Yu A, Guo D, Zhai J.   +6 more
europepmc   +1 more source

Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories

Advanced Energy Materials, EarlyView.
In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen, Zheyu Zhang, Kelvian T. Mularso, Bonghyun Jo, Hyun Suk Jung   +4 more
wiley   +1 more source