Results 81 to 90 of about 191,244 (266)
Nature Communications, 2017 Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many ...
W. Ding +7 more
semanticscholar +1 more source
Hydrogen in Ferroelectrics [PDF]
, 2011 It is well known that the ferroelectric random access memories (FRAM) as one of the most important applications of ferroelectric thin film have attracted much attention. However, the introduction of hydrogen into ferroelectric materials may cause severe degradations in dielectric properties, ferroelectric properties, optical properties and mechanical ...
H. Y. Huang, Li-Jie Qiao, Yan-Jing Su
openaire +3 more sources
Molecularly Thin BaTiO3 Nanosheets with Stable Ferroelectric Response
Advanced Electronic Materials, 2023 2D ferroelectrics provide great promise for future electronics owing to their unique properties at 2D limit. Although simple perovskite oxides (such as BaTiO3 and PbTiO3) are an important target for 2D ferroelectrics, controlled synthesis of 2D ...
Kazuki Hagiwara +6 more
doaj +1 more source
Ferroelectricity and piezoelectricity in monolayers and nanoplatelets of SnS [PDF]
Journal of Applied Physics, v. 124, p. 164302 (2018), 2018 The ground-state structure of monolayers and nanoplatelets of SnS with a thickness from two to five monolayers is calculated from first principles. It is shown that nanoobjects with only odd number of monolayers are ferroelectric. The ferroelectric, piezoelectric, and elastic properties of these polar structures are calculated.
arxiv +1 more source
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions
2022 IEEE International Integrated Reliability Workshop (IIRW), 2022 Ferroelectric devices are currently considered as a viable option for ultra-low power computing, thanks to their ability to act as memory units and synaptic weights in brain inspired architectures. A common methodology to assess their response in different conditions (especially the role of material composition and charge trapping in ferroelectric ...
Benatti L., Vecchi S., Puglisi F. M.
openaire +1 more source
Crystals, 2023 Relaxor ferroelectrics play a vital role as functional components in electromechanical devices. The observation of micro-scale domain structure evolution under electric bias in relaxor ferroelectrics has posed challenges due to their complex domain ...
Kai Li +11 more
doaj +1 more source
Liquid Crystal-Solid Interface Structure at the Antiferroelectric-Ferroelectric Phase Transition [PDF]
Phys. Rev. E 66, 061709 (2002), 2003 Total Internal Reflection (TIR) is used to probe the molecular organization at the surface of a tilted chiral smectic liquid crystal at temperatures in the vicinity of the bulk antiferroelectric-ferroelectric phase transition. Data are interpreted using an exact analytical solution of a real model for ferroelectric order at the surface.
arxiv +1 more source
Accounts of Chemical Research, 2019 Although the first ferroelectric discovered in 1920 is Rochelle salt, a typical molecular ferroelectric, the front-runners that have been extensively studied and widely used in diverse applications, such as memory elements, capacitors, sensors, and ...
Han-Yue Zhang +3 more
semanticscholar +1 more source
Ferroelectric Electron Holography [PDF]
Microscopy and Microanalysis, 2002 Ferroelectrics are increasingly important as materials in semiconductor technology, e.g. for building non-volatile memory chips. For optimisation of the properties of such devices, there is an urgent need for methods, which analyse the ferroelectric properties at nanometer scale. Furthermore, the basic understanding of the interaction of ferroelectrics
Michael Lehmann +3 more
openaire +4 more sources
Designing new ferroelectrics with a general strategy
npj Quantum Materials, 2017 Ferroelectricity: General approach for designing new ferroelectric materials An innovative computational method could enable the design of new classes of ferroelectric materials.
Ke Xu, Xue-Zeng Lu, Hongjun Xiang
doaj +1 more source