Results 81 to 90 of about 111,474 (320)
Hydrogen in Ferroelectrics [PDF]
It is well known that the ferroelectric random access memories (FRAM) as one of the most important applications of ferroelectric thin film have attracted much attention. However, the introduction of hydrogen into ferroelectric materials may cause severe degradations in dielectric properties, ferroelectric properties, optical properties and mechanical ...
H. Y. Huang, Li-Jie Qiao, Yan-Jing Su
openaire +3 more sources
Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
AbstractTo address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van
Sungpyo Baek+9 more
openaire +3 more sources
Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang+14 more
wiley +1 more source
In the past century, ferroelectrics are well known in electroceramics and microelectronics for their unique ferroelectric, piezoelectric, pyroelectric, and photovoltaic effects.
Wen Dong+7 more
doaj +1 more source
Ferroelectric negative capacitance [PDF]
The capacitor is a key element of electronic devices and is characterized by positive capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases and implies a local voltage drop opposed to the overall applied bias. Therefore, a local NC response results in voltage enhancement across the rest of the circuit. Within a suitably
Igor A. Luk'yanchuk+4 more
openaire +4 more sources
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du+11 more
wiley +1 more source
Superparaelectric phase in the ensemble of non-interacting ferroelectric nanoparticles
For the first time we predict the conditions of superparaelectric phase appearance in the ensemble of non-interacting spherical ferroelectric nanoparticles. The superparaelectricity in nanoparticle was defined by analogy with superparamagnetism, obtained
A. N. Morozovska+16 more
core +1 more source
The dynamic polarization reversal of coexisting normal and relaxor ferroelectrics in 1D TMAPbI₃ (tetramethylammonium, TMA) is deciphered through combined experimental and theoretical approaches. By bridging atomic‐scale motion, macroscopic polarization switching, and depolarization effects, a universal methodology is established to engineer next ...
Chen Xue+8 more
wiley +1 more source
Designing new ferroelectrics with a general strategy
Ferroelectricity: General approach for designing new ferroelectric materials An innovative computational method could enable the design of new classes of ferroelectric materials.
Ke Xu, Xue-Zeng Lu, Hongjun Xiang
doaj +1 more source
Optical Control of Ferroelectric Imprint in BiFeO3
Above‐bandgap irradiation at room temperature enables on‐demand optical control of defect‐driven built‐in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen‐in,” can cause severe device degradation, including non‐switchable polarization, dead layers near interfaces, and polarization ...
Haoze Zhang+8 more
wiley +1 more source