Results 81 to 90 of about 44,485 (284)

Barkhausen Noise in a Relaxor Ferroelectric

, 2001
Barkhausen noise, including both periodic and aperiodic components, is found in and near the relaxor regime of a familiar relaxor ferroelectric, PbMg$_{1/3}$Nb$_{2/3}$O$_3$, driven by a periodic electric field.
D. Viehland, E. Hegenbarth, Eugene V. Colla, F. Preisach, L. E. Cross, Lambert K. Chao, M. B. Weissman, M. B. Weissman, M. Yoshida, T. Egami, V. A. Bokov, V. M. Rudyak, V. S. Vikhnin   +12 more
core   +1 more source

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

The monoclinic phase of PZT ceramics: Raman and phenomenological theory studies

, 1999
This work reports on the first Raman detection of the tetragonal to monoclinic phase transition in PZT ceramics near morphotropic phase boundary at low temperatures.
A. G. Souza Filho, A. P. Ayala, B. Jaffe, B. Noheda, C. Carabatos-Nedelec, E. B. Araújo, I. Guedes, J. A. Eiras, J. F. Meng, J. Mendes Filho, K. C. V. Lima, K. Kakewaga, M. J. Haun, M. J. Haun, M. J. Haun, M. J. Haun, M. J. Haun, P. T. C. Freire, R. Merlin   +18 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

The Effect of Electric Aging on Vinylidene Fluoride Copolymers for Ferroelectric Memory

Nanomaterials
Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory elements. The trend in studies showing that a decrease in the degree of crystallinity can lead to an unexpected increase in the electric breakdown field is noted. An
Valentin V. Kochervinskii, Evgeniya L. Buryanskaya, Aleksey S. Osipkov, Mstislav O. Makeev, Dmitry A. Kiselev, Margarita A. Gradova, Oleg V. Gradov, Boris V. Lokshin, Alexandr A. Korlyukov   +8 more
doaj   +1 more source

Ab initio phonon dispersion curves and interatomic force constants of barium titanate

, 1997
The phonon dispersion curves of cubic BaTiO_3 have been computed within a first-principles approach and the results compared to the experimental data. The curves obtained are very similar to those reported for KNbO_3 by Yu and Krakauer [Phys. Rev.
Bilz H., Bussmann-Holder A., Cochran W., Ghosez Ph., Ghosez Ph., Giannozzi P., Gonze X., Harada J., J. P. Michenaud, Jannot B., Luspin Y., Monkhorst H. J., Müller K. A., P.Sc. H. Ghosez, Posternak M., Servoin J.-L., Shirane G., X. Gonze, Zein N. E.   +18 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Volume‐Confined Fabrication of Large‐Scale Single‐Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials

Advanced Science
With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next‐generation wearable electronics ...
Xiao‐Xing Cao, Ru‐Jie Zhou, Yu‐An Xiong, Guo‐Wei Du, Zi‐Jie Feng, Qiang Pan, Yin‐Zhu Chen, Hao‐Ran Ji, Zhenhua Ni, Junpeng Lu, Huihui Hu, Yu‐Meng You   +11 more
doaj   +1 more source

Central mode and soft mode behavior in PbMg1/Nb2/3O3 relaxor ferroelectric

, 2004
The relaxor ferroelectric PbMg1/Nb2/3O3 was investigated by means of broad-band dielectric and Fourier Transform Infrared (FTIR) transmission spectroscopy in the frequency range from 1 MHz to 15 THz at temperatures between 20 and 900 K using PMN films on
Bovtun, V., Brinkman, K., Kamba, S., Kempa, M., Petzelt, J., Setter, N.   +5 more
core   +1 more source