Results 101 to 110 of about 44,734 (286)

The Coupling of Ferroelectric Polarization and Oxygen Vacancy Migration Enables Electrically Controlled Thermal Memories

Advanced Materials, EarlyView.
Ferroelectric Hf0.5Zr0.5O2 epitaxial thin films exhibit a non‐volatile, electrically controlled thermal conductivity enabled by the coupling between oxygen vacancy migration, acting as phonon scatterers, and ferroelectric polarization, acting as ion migration valve.
Dídac Barneo, Miquel Royo, Rafael Ramos, Jesús Carrete, Hugo Romero‐Bernad, Ricardo Jiménez, Víctor Leborán, César Magén, Noa Varela‐Domínguez, Miguel Algueró, Riccardo Rurali, José A. Pardo, Francisco Rivadulla, Eric Langenberg   +13 more
wiley   +1 more source

Electrocaloric effects in ferroelectrics and multiferroics from first principles

Journal of Materiomics
The electrocaloric (EC) effect characterizes the change in temperature or entropy of a material under the application of an external electric field. Ferroelectric and multiferroic materials have attracted considerable interest due to their potential for ...
Zhijun Jiang, Xueqing Wan, Bin Xu, Jorge Íñiguez-González, Laurent Bellaiche   +4 more
doaj   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Is There A Pure Electronic Ferroelectric?

Advanced Electronic Materials
Different from traditional ferroelectrics whose polarization stems from ionic displacements mediated by phonons, electronic ferroelectrics exhibit spontaneous polarization originating from polar electronic ordering.
Xudong Wang, Guichen Teng, Xiangjian Meng, Zhenxiang Cheng, Tie Lin, Hao Shen, Xiaodan Wang, Jianlu Wang, Junhao Chu   +8 more
doaj   +1 more source

Vortex ferroelectric domains

Journal of Physics: Condensed Matter, 2008
We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors.
Gruverman, Alexei, Wu, D., Fan, H.-J., Vrejoiu, I., Alexe, M., Harrison, R. J., Scott, J. F.   +6 more
openaire   +3 more sources

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

Advanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

Advanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu, Ryan Thompson, C. Willem Rischau, Marli R. Cantarino, Premysl Marsik, Sergey L. Bud'ko, Neven Biškup, María Varela, Yurii G. Pashkevich, Serhii M. Orel, Thomas Prokscha, Andreas Suter, Jiangtao Zhao, Ugwumsinachi Oji, Marco Bonura, Peter Bencok, Zaher Salman, Stefano Gariglio, Christian Bernhard, Subhrangsu Sarkar   +19 more
wiley   +1 more source

Geometric isotope effect of deuteration in a hydrogen-bonded host–guest crystal

Nature Communications, 2018
Deuterating a hydrogen bond can change the bond’s geometry, a phenomenon known as the geometric isotope effect (GIE). Here, the authors find that a hydrogen-bonded host–guest crystal, imidazolium hydrogen terephthalate, exhibits significant GIE on its ...
Chao Shi, Xi Zhang, Chun-Hua Yu, Ye-Feng Yao, Wen Zhang   +4 more
doaj   +1 more source

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, EarlyView.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source