Results 81 to 90 of about 44,734 (286)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

The Effect of Electric Aging on Vinylidene Fluoride Copolymers for Ferroelectric Memory

open access: yesNanomaterials
Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory elements. The trend in studies showing that a decrease in the degree of crystallinity can lead to an unexpected increase in the electric breakdown field is noted. An
Valentin V. Kochervinskii   +8 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Compressible spherical dipolar glass model of relaxor ferroelectrics

open access: yes, 2012
The interactions between the dielectric polarization and the fluctuations of the strain (stress) tensor in relaxor ferroelectrics are shown to give rise to the anisotropy of the anharmonic P4-term in the Landau-type free energy, however, the harmonic P2 ...
Kutnjak, Z., Novak, N., Pirc, R.
core   +1 more source

Record Energy Storage Performance Metrics in Ferroelectric Hafnia‐Based Films through Heterostructure Design

open access: yesAdvanced Functional Materials, EarlyView.
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan   +10 more
wiley   +1 more source

Volume‐Confined Fabrication of Large‐Scale Single‐Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials

open access: yesAdvanced Science
With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next‐generation wearable electronics ...
Xiao‐Xing Cao   +11 more
doaj   +1 more source

Development of Ferroelectric Order in Relaxor (1-x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3

open access: yes, 2002
The microstructure and phase transition in relaxor ferroelectric Pb(Mg1/3Nb2/3)O3 (PMN) and its solid solution with PbTiO3 (PT), PMN-xPT, remain to be one of the most puzzling issues of solid state science.
A. A. Bokov   +54 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

open access: yesAdvanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo   +2 more
wiley   +1 more source

Phase-field modeling and electronic structural analysis of flexoelectric effect at 180{\deg} domain walls in ferroelectric PbTiO3

open access: yes, 2017
Flexoelectric effect is the coupling between strain, polarization and their gradients, which are prominent at the nanoscale. Although this effect is important to understand nanostructures, such as domain walls in ferroelectrics, its electronic mechanism ...
Li, Jiangyu   +3 more
core   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long   +26 more
wiley   +1 more source

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