Results 81 to 90 of about 18,249 (302)

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

Universal Polarization Switching Behavior of Disordered Ferroelectrics

open access: yes, 2014
Universal scaling features of polarization switching are established experimentally in rather different classes of disordered ferroelectrics: in well-studied lead-zirconate titanate (PZT) ferroelectrics, in recently synthesized Cu-stabilized 0.94(Bi1 ...
Genenko, Yuri A.   +8 more
core   +2 more sources

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Bulk‐Like Spin Cycloid and Fast Switching in Freestanding BiFeO3

open access: yesAdvanced Functional Materials, EarlyView.
Freestanding BiFeO3 membranes overcome substrate‐induced constraints by simultaneously restoring the intrinsic bulk‐like spin cycloid and enabling ≈50% faster ferroelectric switching than substrate‐clamped epitaxial thin films. This combination of robust noncollinear antiferromagnetic order and efficient electric‐field switching establishes ...
Pratap Pal   +12 more
wiley   +1 more source

Quasi-Debye microwave loss in Perovskite ferroelectrics

open access: yes
A strong de electric field dependence of the dielectric permittivity makes perovskite ferroelectrics promising materials for tunable microwave devices like phase shifters, tunable resonators, tunable filters etc.
Astafiev, K. F., Tagantsev, A. K.
core   +1 more source

Optical properties (VUV region) of ABO(3) ferroelectrics: Application of syncrotron radiation

open access: yes, 2004
10th European Meeting on Ferroelectricity -- AUG 03-08, 2003 -- Univ Cambridge, Cambridge, ENGLANDWOS: 000222471200026The method of vacuum ultraviolet (VUV) spectroscopy were used to study the optical properties of ABO(3) ferroelectrics (LiNbO3, LiTaO3 ...
Mamedov, AM, Mamedov A.M.
core   +1 more source

Designing new ferroelectrics with a general strategy

open access: yesnpj Quantum Materials, 2017
Ferroelectricity: General approach for designing new ferroelectric materials An innovative computational method could enable the design of new classes of ferroelectric materials.
Ke Xu, Xue-Zeng Lu, Hongjun Xiang
doaj   +1 more source

Nanoconfinement‐Induced Second‐Harmonic Circular Dichroism via Chirality–Ferroelectric Coupling

open access: yesAdvanced Functional Materials, EarlyView.
Nanoconfinement of a ferroelectric nematic liquid crystal within a chiral nanoporous sponge yields an enhanced second‐harmonic generation circular dichroism (|gSHG–CD| ≈ 1.1). Polarization‐resolved analysis suggests an additional magnetic‐dipole‐associated nonlinear contribution under nanoconfinement, highlighting chirality–ferroelectric coupling as a ...
Jae‐Jin Lee   +5 more
wiley   +1 more source

Charge localization in the model of relaxor ferroelectrics

open access: yes, 2020
Phenomenological approach to a relaxor theory is developed and some experimental results in the support of this theory are received. The optical absorption spectrum, luminescent emission and photoconductivity are investigated in the wide temperature ...
Nikitin S.   +4 more
core  

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam   +18 more
wiley   +1 more source

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