Results 51 to 60 of about 427,015 (336)

Two‐Dimensional Materials as a Multiproperty Sensing Platform

open access: yesAdvanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana   +11 more
wiley   +1 more source

Self-tuning bandpass filter [PDF]

open access: yes, 1973
An electronic filter is described which simultaneously maintains a constant bandwidth and a constant center frequency gain as the input signal frequency varies, and remains self-tuning to that center frequency over a decade range.
Deboo, G. J., Hedlund, R. C.
core   +1 more source

Revisit the spin-FET: Multiple reflections, inelastic scattering, and lateral size effects

open access: yes, 2014
We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable differences from ...
Li, Xin-Qi, Sun, Qing-feng, Xu, Luting
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET

open access: yes, 2017
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $\kappa$-(BEDT-TTF)$_2$CuN(CN)$
Kato, Reizo   +4 more
core   +2 more sources

Down Regulation with Luteal GnRH Agonist Therapy in Euploid Embryo Transfers Does Not Impact Pregnancy Rates [PDF]

open access: yes, 2020
Introduction : Gonadotropin-releasing hormone (GnRH) agonists have been used during assisted reproductive technology (ART) treatment for pituitary suppression and stimulation.
Bergin, MD, Keri   +4 more
core   +1 more source

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

open access: yesAdvanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee   +17 more
wiley   +1 more source

Photon-gated spin transistor

open access: yes, 2016
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics.
Cui, Bin   +6 more
core   +1 more source

A Multichannel Spatial Compressed Sensing Approach for Direction of Arrival Estimation [PDF]

open access: yes, 2010
The final publication is available at http://link.springer.com/chapter/10.1007%2F978-3-642-15995-4_57ESPRC Leadership Fellowship EP/G007144/1EPSRC Platform Grant EP/045235/1EU FET-Open Project FP7-ICT-225913 ...
D. Malioutov   +7 more
core   +4 more sources

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

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