Results 81 to 90 of about 427,015 (336)

Engineered Protein‐Based Ionic Conductors for Sustainable Energy Storage Applications

open access: yesAdvanced Materials, EarlyView.
Rational incorporation of charged residues into an engineered, self‐assembling protein scaffold yields solid‐state protein films with outstanding ionic conductivity. Salt‐doping further enhances conductivity, an effect amplified in the engineered variants. These properties enable the material integration into an efficient supercapacitor.
Juan David Cortés‐Ossa   +14 more
wiley   +1 more source

Some features of a current limiter on the field-effect transistor

open access: yesТехнологія та конструювання в електронній апаратурі, 2011
The paper presents researches of dependence of stabilization current from the external resistance connecting the source and the gate of the field-effect transistor in the mode of the current limiter — a two-pole terminal.
A. V. Karimov   +6 more
doaj  

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

open access: yesAdvanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi   +4 more
wiley   +1 more source

Cost-effectiveness of [18F] fluoroethyl-L-tyrosine for temozolomide therapy assessment in patients with glioblastoma [PDF]

open access: yes, 2019
Background and Purpose: Glioblastomas are the most aggressive of all gliomas. The prognosis of these gliomas, which are classified as grade IV tumors by the World Health Organization (WHO), is poor.
Baguet, Tristan   +3 more
core   +1 more source

Predicting IDH genotype in gliomas using FET PET radiomics

open access: yesScientific Reports, 2018
Mutations in the isocitrate dehydrogenase (IDH mut) gene have gained paramount importance for the prognosis of glioma patients. To date, reliable techniques for a preoperative evaluation of IDH genotype remain scarce.
P. Lohmann   +16 more
semanticscholar   +1 more source

Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet

open access: yesAdvanced Materials, EarlyView.
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens   +8 more
wiley   +1 more source

On the possibility of tunable-gap bilayer graphene FET

open access: yes, 2008
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation.
Fiori, G., Iannaccone, G.
core   +1 more source

MEMS based highly sensitive dual FET gas sensor using graphene decorated Pd-Ag alloy nanoparticles for H2 detection

open access: yesScientific Reports, 2018
A low power, dual-gate field-effect transistor (FET) hydrogen gas sensor with graphene decorated Pd-Ag for hydrogen sensing applications was developed.
B. Sharma, Jung-Sik Kim
semanticscholar   +1 more source

Microscopic Insights into Magnetic Warping and Time‐Reversal Symmetry Breaking in Topological Surface States of Rare‐Earth‐Doped Bi2Te3

open access: yesAdvanced Materials, EarlyView.
Magnetic doping of the topological insulator Bi2Te3 with erbium adatoms induces out‐of‐plane magnetism and breaks time‐reversal symmetry, opening a Dirac gap and driving a Fermi surface transition from hexagonal to star‐of‐David geometry. Microscopy, spectroscopy, and magnetic dichroism reveal atomically controlled magnetic interactions that tailor the
Beatriz Muñiz Cano   +18 more
wiley   +1 more source

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

open access: yes, 2011
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less
Clement, Nicolas   +3 more
core   +1 more source

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