Results 231 to 240 of about 127,967 (338)

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

The Importance of Being Imperfect: Structure and Function of Bacterial Amyloid. [PDF]

open access: yesAdv Sci (Weinh)
Peña-Díaz S   +12 more
europepmc   +1 more source

Is Supramolecular Filament Chirality the Underlying Cause of Major Morphology Differences in Amyloid Fibrils?

open access: green, 2014
Dmitry Kurouski   +8 more
openalex   +2 more sources

Micro and Nanostructural Diversity of Lizard Osteoderm Capping Tissue in Relation to Mechanical Performance

open access: yesAdvanced Functional Materials, EarlyView.
This study shows that lizard osteoderm capping tissue is a hyper‐mineralized hydroxyapatite layer consistently covering the superficial osteoderm surface in those species studied here, yet it varies greatly in morphology, nanostructure, and mechanical performance across species.
Adrian Rodriguez‐Palomo   +10 more
wiley   +1 more source

Repeat Domains of Melanosome Matrix Protein Pmel17 Orthologs Form Amyloid Fibrils at the Acidic Melanosomal pH

open access: hybrid, 2010
Ryan P. McGlinchey   +5 more
openalex   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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