Results 31 to 40 of about 8,149 (125)
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors [PDF]
, 2017 We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications.
Chow T. Paul +4 more
core +2 more sources
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku +18 more
wiley +1 more source
, 2013 The Single Cooper Pair Josephson Transistor is a device that exhibits at the same time charge quantization and phase coherence. Coherent quantum phase slip phenomenon is "dual" the Josephson phase coherence while the charge quantization is dual to the ...
Chtchelkatchev, N. M., Kafanov, S.
core +1 more source
Resonant Tunneling Diode‐Integrated Terahertz Transceiver Module for Wireless Communications
Advanced Photonics Research, Volume 7, Issue 4, April 2026.Resonant tunneling diode‐enabled terahertz transceiver module. Terahertz bands are essential for next‐generation wireless communications, offering ultrabroad bandwidth and unprecedented data throughput. However, realizing compact, low‐cost, broadband, and efficient terahertz transceiver modules remains challenging.
Weijie Gao +12 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
, 2018 The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the detection of ...
Aielli, Giulio +10 more
core +1 more source
Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers [PDF]
, 2016 The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due tothe increasing thermal ...
Baranyai, Roland +6 more
core +3 more sources
Ground-state characterization of Nb charge-phase Josephson qubits
, 2006 We present investigations of Josephson charge-phase qubits inductively coupled to a radio-frequency driven tank-circuit enabling the readout of the states by measuring the Josephson inductance of the qubit.
A. B. Zorin +12 more
core +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Advanced Functional Materials, Volume 36, Issue 14, 16 February 2026.Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source
Quantum behavior of graphene transistors near the scaling limit
, 2012 The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity,
Avouris, Phaedon +5 more
core +1 more source