Results 41 to 50 of about 8,149 (125)

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

, 2020
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation.
Imura, Masataka, Inoue, Jun-ichi, Kageura, Taisuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Sasama, Yosuke, Takahide, Yamaguchi, Taniguchi, Takashi, Uchihashi, Takashi, Watanabe, Kenji   +9 more
core   +1 more source

3D Digital Light Processing of Redox‐Active Polymers for Electrochemical Applications

Advanced Functional Materials, Volume 36, Issue 17, 26 February 2026.
3D printing of electrochemically switchable conducting polymers is achieved by Digital Light Processing of redox‐active carbazole‐based polymer materials. Complex 2D and 3D architectures including dot arrays and pyramids clearly show the potential for novel 3D switchable electrochemical devices for sensors, electrochromic displays as well as 3D printed
Christian Delavier, Svenja Bechtold, Marcus H. Dodds, Eva Blasco, Sabine Ludwigs   +4 more
wiley   +1 more source

Nanomechanical characterization of quantum interference in a topological insulator nanowire [PDF]

, 2019
The discovery of two-dimensional gapless Dirac fermions in graphene and topological insulators (TI) has sparked extensive ongoing research toward applications of their unique electronic properties.
Doh, Yong-Joo, Hou, Yasen, Kim, Bongsoo, Kim, Jihwan, Kim, Kun Woo, Kim, Minjin, Suh, Junho, Yu, Dong   +7 more
core   +4 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Electronic–Structural Phase Correlations in Oxygen‐Deficient Hafnia Nanocrystals

Small, Volume 22, Issue 2, 8 January 2026.
Layers of HfO2 nanoparticles are fabricated by DLI‐ALD. The resulting devices exhibit a pyroelectric response, contrary to expectations based on SAED and XRD results. A phase transition from orthorhombic to tetragonal phase (above 200 K) is revealed.
Cristina Besleaga, Mihaela Botea, Catalin C. Negrila, Andrei Kuncser, Cosmin M. Istrate, Andrei Nitescu, George E. Stan, Swayam P. Sahoo, Bertrand Vilquin, Lucian Pintilie   +9 more
wiley   +1 more source

Nano‐Scale Phonon Dynamics in GaN: Fundamentals and Strategies for Thermal Transport Modulation

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Xx xx. ABSTRACT With the rapid advancement of electronic technologies, the effective thermal management in gallium nitride (GaN) ‐based devices has emerged as a critical challenge, particularly as device dimensions shrink to scales comparable to phonon mean free paths.
Tiantian Luan, Liwen Sang, Ziling Cai, Yutao Fang, Yabing Li, Rui Yin, Jianlu Wang, Bo Shen   +7 more
wiley   +1 more source

Harnessing the Power of 2D Materials for Flexible Energy Harvesting Applications

Carbon Energy, Volume 7, Issue 12, December 2025.
Ambient energy harvesting offers transformative potential for sustainable energy solutions, with 2D materials emerging as a game‐changing platform due to their atomic‐scale thickness, tunable properties, and versatility. This review explores the mechanisms, advantages, and challenges of 2D material–based energy harvesting technologies, emphasizing ...
Muhammad Zubair, Dongseong Lee, Dae Joon Kang   +2 more
wiley   +1 more source

Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN

physica status solidi (a), Volume 222, Issue 23, December 2025.
The impact ionization coefficients of high‐Al content AlGaN are experimentally extracted for the first time using photomultiplication method. A good agreement with prior numerical predictions is achieved. Additionally, theoretical breakdown voltage and critical electric field in high‐Al content AlGaN are computed, offering essential data to advance the
Zhongtao Zhu, Pramod Reddy, Yashas Satapathy, Lina Cao, Juncheng Xiong, Mateo Gutierrez, Yu‐En Jeng, Yu Duan, Wesley Turner, Anthony J. Hoffman, Ronny Kirste, Seiji Mita, William Mecouch, Ramón Collazo, Spyridon Pavlidis, Zlatko Sitar, Patrick Fay   +16 more
wiley   +1 more source

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

, 2009
The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and
A Huttel, AB Hutchinson, AC Ferrari, B Lassagne, B Witkamp, BI Yakobson, C Lee, CD Dimitrakopoulos, Changyao Chen, D Garcia-Sanchez, E Stolyarova, F Schedin, HJ Mamin, Horst L. Stormer, HWC Postma, HY Chiu, I Bargatin, I Meric, Ioannis Kymissis, J Atalaya, J Moser, James Hone, JS Bunch, JS Bunch, K Jensen, KI Bolotin, Kirill I. Bolotin, KL Ekinci, KS Novoselov, M Ishigami, MD LaHaye, MY Han, MY Huang, N Mohanty, N Mounet, P Blake, P Mohanty, Philip Kim, RA Suleimanov, RG Knobel, S Evoy, Sami Rosenblatt, SC Jun, TMG Mohiuddin, Tony F. Heinz, V Sazonova, W Bao, William Kalb, YT Yang   +48 more
core   +1 more source

Charge-based silicon quantum computer architectures using controlled single-ion implantation [PDF]

, 2003
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation.
Buhler, T. M., Chan, V., Clark, R. G., Dzurak, A. S., Ferguson, A. G., Gauja, E., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., Milburn, G. J., Pakes, C. I., Prawer, S., Reilly, D. J., Stanley, F. E., Wellard, C., Yang, C.   +15 more
core   +1 more source