Silicon carbide semiconductor technology for high temperature and radiation environments [PDF]
Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented.
Matus, Lawrence G.
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Boron-doped diamond solution-gate field-effect transistor (BDD-SGFET) biosensor for gene mutation detection. [PDF]
Lin Z, Zheng Y, Chen Y, Wang C, Yuan Z.
europepmc +1 more source
Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]
Zhou H +16 more
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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]
Zhou H +25 more
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Contactless thermal boundary resistance measurement of GaN-on-diamond wafers [PDF]
Faili, Firooz +6 more
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From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]
Petkov N, Fagas G.
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Special Issue on Miniaturized Transistors, Volume II. [PDF]
Filipovic L, Grasser T.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
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Imaging local diffusion in microstructures using NV-based pulsed field gradient NMR. [PDF]
Bruckmaier F +9 more
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Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]
Won YH +6 more
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