Results 111 to 120 of about 1,234,359 (313)

Siloxane‐Functionalized Silicon Phthalocyanine OTFTs: High Hole Mobility and Unexpected p‐Type Character

Advanced Functional Materials, EarlyView.
In this paper, the first use of a siloxane‐substituted silicon phthalocyanine (iso(Si3O)2SiPc) in OTFTs is reported. Moreover, this compound displays the highest hole mobility (exceeding 1 cm2 V−1 s−1) ever recorded for SiPc, and the GIWAXS study reveals thin films with an exceptionally uniform crystalline texture.
Nicolas Ledos, Halynne R. Lamontagne, Joseph Manion, Frédéric Castet, Benoît H. Lessard, Jaclyn L. Brusso   +5 more
wiley   +1 more source

Phase Change Material‐Driven Tunable Metasurface for Adaptive Terahertz Sensing and Communication in 6G Perceptive Networks

Advanced Functional Materials, EarlyView.
This study explores the benefits of metasurfaces made from functional materials, highlighting their ability to be adapted and improved for various high‐frequency applications, including communications and sensing. It first demonstrates the potential of these functional material‐based metasurfaces to advance the field of sub‐THz perceptive networks ...
Yat‐Sing To, Jiachen Du, Cyril Decroze, Laure Huitema, Aurelian Crunteanu, Hang Wong   +5 more
wiley   +1 more source

Chemo-Electrical Signal Transduction by Using Stimuli-Responsive Polymer Gate-Modified Field Effect Transistor [PDF]

, 2014
Akira Matsumoto, Yusuke Tsurui, Hiroko Matsumoto, Yasuhiro Maeda, Toru Hoshi, Takashi Sawaguchi, Yuji Miyahara   +6 more
openalex   +1 more source

Ice Lithography: Recent Progress Opens a New Frontier of Opportunities

Advanced Functional Materials, EarlyView.
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang, Gwendoline A. E. Anand, Rubaiyet Haque, Dylan A. Chiaro, Mona Sharma, Andrew R. Williams, Frank Niklaus, Daryl W. Yee, Gavin M. King, Anpan Han   +9 more
wiley   +1 more source

Tailoring the Properties of Functional Materials With N‐Oxides

Advanced Functional Materials, EarlyView.
The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich, Michelle Kobus, Shirin Mesgarha, Erica Moretto, Laurens Grosche, Wolfgang Maison   +5 more
wiley   +1 more source

Ultraprecise Detection of Influenza Virus by Antibody-Modified Graphene Transistors

Sensors
Over the past decade, the large-scale spread of influenza viruses has posed an increasing burden on public health. The effective screening of influenza agents requires a fast, precise, on-site and easy-to-operate method.
Gang Wang, Mingming Zhang, Minghua Zhu, Tengfei Zhang, Xueqin Qian, Yili Liu, Xinye Ma, Changhao Dai, Dacheng Wei, Zhaoqin Zhu, Juntao Sun, Mingquan Guo   +11 more
doaj   +1 more source

Ultralow noise field-effect transistor from multilayer graphene [PDF]

, 2009
Atindra Nath Pal, Arindam Ghosh
openalex   +1 more source

High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect [PDF]

, 2023
Chun-Kuei Chen, Sonu Hooda, Zihang Fang, Mohan Lal, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Thean   +8 more
openalex   +1 more source

Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors

Advanced Functional Materials, EarlyView.
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee, Okin Song, Ji Yun Park, Yonghyun Albert Kwon, Jae Hyung Kim, In Soo Kim, Zdeněk Sofer, Jeong Ho Cho, Deep Jariwala, Hyesung Park, Joohoon Kang   +10 more
wiley   +1 more source

Scaling Properties of $\hbox{Ge}$ –$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Field-Effect Transistors [PDF]

, 2009
Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K Banerjee, Emanuel Tutuc, Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K Banerjee, Emanuel Tutuc   +11 more
openalex   +1 more source