Results 91 to 100 of about 15,726,423 (289)

Junctionless multigate field-effect transistor [PDF]

, 2009
This paper describes a metal-oxide-semiconductor MOS transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping.
Aryan Afzalian, Dehdashti-Akhavan, Nima, Ran Yan, Isabelle Ferain, Jean-Pierre Colinge, Yan, Ran, Nima Dehdashti Akhavan, Chi-Woo Lee, ferain, Isabelle, Akhavan, Nima Dehdashti, Afzalian, Aryan, Colinge, Jean-Pierre, Lee, Chi-Woo   +12 more
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]

, 2012
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A., Asenov, A., A. Martinez, Aldegunde, M., M. Aldegunde, A. Asenov, Martinez, A., Antonio Martinez Muniz, A.R. Brown, Roy, S., S. Roy   +10 more
core   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Fast Cyclic Voltammetry of Self-assembled Alkanethiol and Hybridized DNA on Gold Plates for Novel Field Effect Transistor Sensors

, 2008
Fast Cyclic Voltammetry of Self-assembled Alkanethiol and Hybridized DNA on Gold Plates for Novel Field Effect Transistor ...
徐芬, 孙立贤, 曹忠
core  

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

Next Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar, Kishore Sivaram, N. Sreejisha, Selvakumar Murugesan   +3 more
doaj   +1 more source

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

Advanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash, Rituparna Mohanty, Jack Leber, David Nageb, Mirella Richard, Sharan Singh, Amin Reihani   +6 more
wiley   +1 more source

Um modelo eficiente do transistor MOS para o projeto de circuitos VLSI: [dissertação] [PDF]

, 2007
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho é detalhada a implementação do modelo ACM do transistor MOS no simulador elétrico ELDO (Mentor Graphics).
Siebel, Osmar Franca
core  

A Study on Graphene—Metal Contact

Crystals, 2013
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu, Jun Wei, Xiaowei Sun, Wenjun Liu   +3 more
doaj   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source