Results 91 to 100 of about 48,774 (300)
Advanced Functional Materials, EarlyView.A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang +4 more
wiley +1 more source
Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor [PDF]
, 2010 Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a ...
Sadeghi, Hatef
core
Transport and Field Emission Properties of MoS2 Bilayers
Nanomaterials, 2018 We report the electrical characterization and field emission properties of MoS 2
Francesca Urban +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim +9 more
wiley +1 more source
Processing organic semiconductors [PDF]
, 2010 PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
Advanced Functional Materials, EarlyView.An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Graphene Semiconductor Field Effect Transistor [PDF]
, 2016 Manoj kumar Manimaran's, Isaac Macwan's, and Prabir Patra's poster on a Graphene Semiconductor Field Effect ...
Macwan, Isaac +2 more
core
Design and Fabrication of All Organic Field Effect Transistor [PDF]
, 2011 All organic field effect transistor consist of poly-3-hexyloxythiophene, undoped poly-3,3”-didecyl-2,2’,5’,2”-terthiophene and polypyrrole has been successfully developed. Poly-3-hexyloxythiophene was applied as gate material. Undoped poly-3,3”-didecyl-2,
Persaud, Krishna C.; The University of Manchester, UK +1 more
core +2 more sources
Monolayer and bilayer graphene field effect transistor using Verilog-A [PDF]
, 2023 Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive and ballistic conditions.
Vimala P., Nayana G. H.
core +2 more sources
Advanced Functional Materials, EarlyView.The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source