Results 71 to 80 of about 141,900 (295)

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

AIP Advances, 2013
Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to ...
Suhyun Kim, Joong Jung Kim, Younheum Jung, Kyungwoo Lee, Gwangsun Byun, KyoungHwan Hwang, Sunyoung Lee, Kyupil Lee   +7 more
doaj   +1 more source

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance [PDF]

, 2010
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS.
Gao, Yunfei, Low, Tony, Lundstrom, Mark S., Nikonov, Dmitri E.   +3 more
core   +3 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Field effect transistor biosensors for healthcare monitoring

Interdisciplinary Medicine
The burgeoning demand for healthcare monitoring has brought field effect transistor (FET) biosensors into the spotlight as a highly efficient detection technology. FET biosensors offer inherent advantages including high sensitivity, rapid response times,
Zhicheng Zhang, Jing‐Jing Hu, Shijun Lin, Jiajun Wu, Fan Xia, Xiaoding Lou   +5 more
doaj   +1 more source

Ion-Sensitive Field-Effect Transistor for Biological Sensing

Sensors, 2009
In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing ...
Chang-Soo Lee, Sang Kyu Kim, Moonil Kim
doaj   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Graphene field-effect transistor application for flow sensing

EPJ Web of Conferences, 2017
Microflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature ...
Łuszczek Maciej, Świsulski Dariusz, Hanus Robert, Zych Marcin, Petryka Leszek   +4 more
doaj   +1 more source

Field effect transistor and method of construction thereof [PDF]

, 1978
A field effect transistor is constructed by placing a semi-conductor layer on an insulating substrate so that the gate region is separated from source and drain regions. The gate electrode and gate region of the layer are of generally reduced length, the
Fletner, W. R.
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source