Results 81 to 90 of about 48,774 (300)

High Performance Durable Vanadium Dioxide Spectral Selective Modulation Smart Windows

open access: yesAdvanced Functional Materials, EarlyView.
Crystallinity‐enhanced VO2 nanoparticles with a self‐limited amorphous oxidation shell achieve an order of magnitude durability improvement and high spectral selective modulation performance (luminous transmittance of 28.5%, solar modulation of 10.5%, and mid‐infrared emissivity modulation of 0.5) for smart windows.
Bin Li   +7 more
wiley   +1 more source

Light responsive polymer field-effect transistor [PDF]

open access: yes, 2001
We report the effect of light incident on a polymer-based field-effect transistor and demonstrate the utility of light as an additional controlling parameter of the transistor state. The transistor exhibits large photosensitivity indicated by the sizable
Narayan, K. S.   +3 more
core   +1 more source

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

open access: yesIEEE Journal of the Electron Devices Society, 2018
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park   +3 more
doaj   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim   +14 more
wiley   +1 more source

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]

open access: yes, 2012
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A.   +10 more
core   +1 more source

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

open access: yesAdvanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots [PDF]

open access: yes, 2011
The output characteristics of a modulation-doped GaAs/AlGaAs field-effect transistor with InAs quantum dots(QDs) embedded in the barrier layer(QDFET) have been studied at low temperature. Optically induced current oscillation in the output currentvoltage(
W. Liu   +12 more
core   +1 more source

Programmable 2D Magnetic Clusterphenes With High Curie Temperature and Strong Magnetic Anisotropy via Cluster Assembly and Ligand Synergy

open access: yesAdvanced Functional Materials, EarlyView.
Programmable 2D magnetic clusterphenes are realized through a ligand‐mediated cluster‐assembly strategy. Direct linking of magnetic superatomic clusters enhances electron delocalization and symmetry breaking, enabling the concurrent strengthening of magnetic exchange interactions and spin–orbit coupling.
Junxiang Fu   +13 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel [PDF]

open access: yes, 2017
This study investigated a vertically aligned field emission transistor with a cylindrical vacuum channel. The channel length of this proposed transistor can be precisely controlled and easily fabricated to be comparable to the mean free path of ...
Tian, Jinshou   +4 more
core   +1 more source

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