Results 191 to 200 of about 48,774 (300)

Field-Effect Transistor Based on Nanocrystalline Graphite for DNA Immobilization. [PDF]

Biomolecules
Adiaconita B, Chiriac E, Burinaru T, Marculescu C, Pachiu C, Brincoveanu O, Simionescu O, Avram M.   +7 more
europepmc   +1 more source

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

In Situ Electrically Resettable Field-Effect Transistor Biosensors for Continuous and Multiplexed Neurotransmitter Detection. [PDF]

Adv Sci (Weinh)
Xiao B, Li T, Cao X, Zhang Y, He J, Xiao M, Zhang Z.   +6 more
europepmc   +1 more source

Smart Nanotechnologies for Multimodal Neuromodulation and Brain Interfacing

Advanced Science, EarlyView.
Recent advances in smart nanotechnologies are expanding the toolbox for brain interfacing, from wireless neuromodulation and high‐resolution sensing to targeted delivery within the central nervous system. By combining responsive nanomaterials with bioinspired design, these platforms enable multimodal interactions with neurons and glia, while also ...
Tommaso Curiale, Marie Celine Lefevre, Alessio Carmignani, Maria Cristina Ceccarelli, Matteo Battaglini, Attilio Marino, Gianni Ciofani   +6 more
wiley   +1 more source

Hydrazine Intercalation into 2D MoTe₂ Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel)
Yuan L, Wu Y, Ou H, Wu D, Ji Y, Qi D, Zhang W.   +6 more
europepmc   +1 more source

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. [PDF]

Micromachines (Basel)
Cheng Q, Yang M, Gao Z, Wang R, He J, Yan F, Tang X, Zhang W, Hu Z, Mu J.   +9 more
europepmc   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Ultrasensitive and Label-Free Detection of Phosphorylated Tau-217 Protein in Alzheimer's Disease Using Carbon Nanotube Field-Effect Transistor (CNT-FET) Biosensor. [PDF]

Biosensors (Basel)
Wang J, Yao K, Li J, Wong DW, Cheung JC.
europepmc   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source