A nonvolatile magnon field effect transistor at room temperature. [PDF]
Cheng J +18 more
europepmc +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Highly sensitive field-effect transistor sensor based on ZnO/TiO<sub>2</sub> for quantification of aflatoxin G2 with optimized initial measurement. [PDF]
Nemati SS +4 more
europepmc +1 more source
Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang +3 more
wiley +1 more source
Effect of Chromium Adhesion Layer Thickness on Contact Resistance and Schottky Barrier Characteristics in WSe<sub>2</sub> Field-Effect Transistor. [PDF]
Kim SH +6 more
europepmc +1 more source
Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim +13 more
wiley +1 more source
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. [PDF]
Kumar M +5 more
europepmc +1 more source
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng +9 more
wiley +1 more source
Preparation and Performance Exploration of MoS<sub>2</sub>/WSe<sub>2</sub> Van Der Waals Heterojunction Tunneling Field-Effect Transistor. [PDF]
Chong C, Liu H, Wang S, Chen S, Yan C.
europepmc +1 more source

