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1983
Field-effect transistors are a more recent development than bipolar transistors, and make use of a completely different mechanism to achieve amplification of a signal. Field-effect transistors (FETs) are unipolar, and involve only one type of charge carrier (electrons or holes) in their operation.
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Field-effect transistors are a more recent development than bipolar transistors, and make use of a completely different mechanism to achieve amplification of a signal. Field-effect transistors (FETs) are unipolar, and involve only one type of charge carrier (electrons or holes) in their operation.
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1988
The field effect transistor (FET) is a semiconductor device that depends for its operation on the control of current by an electric field. The FET has three terminals, these being the source, the drain and the gate. The gate acts as the control terminal, and the voltage applied between the gate and the source controls the flow of current between source
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The field effect transistor (FET) is a semiconductor device that depends for its operation on the control of current by an electric field. The FET has three terminals, these being the source, the drain and the gate. The gate acts as the control terminal, and the voltage applied between the gate and the source controls the flow of current between source
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Physics Bulletin, 1973
London: Mullard 1912 pp 132 price £1.80 This little book is a worthy addition to Mullard's occasional series of technical books. After an introductory survey chapters are devoted to the junction FET and to the MOSFET.
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London: Mullard 1912 pp 132 price £1.80 This little book is a worthy addition to Mullard's occasional series of technical books. After an introductory survey chapters are devoted to the junction FET and to the MOSFET.
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2013
The idea of using an electric field to modulate the conductivity of a semiconductor was first proposed and patented by Lilienfeld in 1925 (Fig. 4.1). This type of field effect phenomenon is used today in various types of field effect transistors (FETs).
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The idea of using an electric field to modulate the conductivity of a semiconductor was first proposed and patented by Lilienfeld in 1925 (Fig. 4.1). This type of field effect phenomenon is used today in various types of field effect transistors (FETs).
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Nature, 1971
Field Effect Electronics . By W. Gosling, W. G. Townsend and J. Watson. Pp. xvii + 364. (Butterworth: London, March 1971.) £8.
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Field Effect Electronics . By W. Gosling, W. G. Townsend and J. Watson. Pp. xvii + 364. (Butterworth: London, March 1971.) £8.
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1994
FIELD-EFFECT transistors (FETs), though simpler to make than BJTs, were held back for many years by manufacturing difficulties with the gate insulation layer. In the 1970s the problems were solved and FET technology developed at a rapid pace. FETs are now more widely used than BJTs and have made an enormous impact on integrated circuit (IC) technology.
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FIELD-EFFECT transistors (FETs), though simpler to make than BJTs, were held back for many years by manufacturing difficulties with the gate insulation layer. In the 1970s the problems were solved and FET technology developed at a rapid pace. FETs are now more widely used than BJTs and have made an enormous impact on integrated circuit (IC) technology.
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Polymer field-effect transistors
2008Printable electronics is a key application area for conjugated polymers. Much emphasis is placed on developing a transistor that could be built merely from solution processable materials, show stable electronic performance, and offer a sufficient lifetime for any chosen application.
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IETE Journal of Education, 1970
The field effect transistor is a unipolar (one type carrier) semiconductor device. This device existed as a laboratory device from 1952 to 1962. This is because semiconductor device technology has recently been able to produce that degree of refinement necessary for the production of a thin, lightly doped layer between two more heavily doped layers of ...
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The field effect transistor is a unipolar (one type carrier) semiconductor device. This device existed as a laboratory device from 1952 to 1962. This is because semiconductor device technology has recently been able to produce that degree of refinement necessary for the production of a thin, lightly doped layer between two more heavily doped layers of ...
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1979
Two families of transistors exist: unipolar and bipolar. It is assumed in this book that the reader is familiar with the bipolar family which incorporates npn and pnp transistors. These rely on the flow of two types of carrier for their operation, namely minority and majority carriers.
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Two families of transistors exist: unipolar and bipolar. It is assumed in this book that the reader is familiar with the bipolar family which incorporates npn and pnp transistors. These rely on the flow of two types of carrier for their operation, namely minority and majority carriers.
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