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Gas Sensing Properties of Indium-Oxide-Based Field-Effect Transistor: A Review. [PDF]

open access: yesSensors (Basel)
Liang C   +10 more
europepmc   +1 more source
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Field-Effect Transistors

1983
Field-effect transistors are a more recent development than bipolar transistors, and make use of a completely different mechanism to achieve amplification of a signal. Field-effect transistors (FETs) are unipolar, and involve only one type of charge carrier (electrons or holes) in their operation.
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Ambipolar Field Effect Transistor

MRS Proceedings, 1985
AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.
Hans Pfleiderer, Wilhelm Kusian
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A Unipolar “Field-Effect” Transistor

Proceedings of the IRE, 1952
The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these ...
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Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

Biosensors, 2021
Saghi Forouhi   +2 more
exaly  

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