Results 201 to 210 of about 637,839 (383)

Orbitronics: Mechanisms, Materials and Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Orbitronics, originating from the orbital angular momentum of the electrons, represents an emerging field for applications in memory devices, computing components, and terahertz emitters. This review summarizes recent achievements in orbitronics, highlights the differentiation of orbital mechanisms and the classification of orbital materials, and ...
Ping Wang   +7 more
wiley   +1 more source

High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates

open access: yesAdvanced Electronic Materials, EarlyView.
The silicon nanowire field effect transistors integrated on flexible plastics reveal high electronic performance and mechanical stability under repeated bending cycles. The employment of in‐plane silicon nanowire channels enables precise alignment of transistor arrays.
Ting Zhang   +4 more
wiley   +1 more source

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic synaptic transistor based on core‐multi‐shell quantum dots and Pentacene achieves a recognition capability under different light intensities that closely resembles that of the human eye. Under optimal light intensity, the recognition accuracy for the MNIST dataset can reach 91.52%.
Haonan Wang   +8 more
wiley   +1 more source

Neuron‐Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks

open access: yesAdvanced Electronic Materials, EarlyView.
In this article, a biomolecular model neuron capable of integrating charge is proposed, evaluated, and simulated as a soft neuromorphic device. The device traps charge within microfluidic droplets using lipid membranes and voltage‐activated pores. The trapped charge produces electrowetting of the lipid interfaces, which facilitates multiple memory ...
Braydon Segars   +5 more
wiley   +1 more source

Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor

open access: yesAdvanced Electronic Materials, EarlyView.
Through the exploitation of the nonlinear Hall effect, an ultrahigh voltage responsivity (1.7×106 V W−1) is observed at room temperature in chiral tellurium nanosheets, a Weyl semiconductor with remarkable gate tunability. The voltage responsivity is orders of magnitude larger than those from other nonlinear Hall materials and even commercial Schottky ...
Hao Liu   +8 more
wiley   +1 more source

Field programmable gate array based hardware implementation of a gradient filter for edge detection in colour images with subpixel precision

open access: gold, 2010
Mathias Schellhorn   +6 more
openalex   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger   +8 more
wiley   +1 more source

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