Results 201 to 210 of about 6,943 (308)
A new vertical transistor design with a dual‐modulation strategy is proposed to overcome the limitations of conventional transistors. This architecture uses a micro‐hole patterned electrode and a graphene electrode to enhance channel control and incorporates a leakage blocking layer to suppress off‐state current.
Goeun Pyo +6 more
wiley +1 more source
Field-Programmable Gate Array-Based Chaos Oscillator Implementation for Analog-Discrete and Discrete-Analog Chaotic Synchronization Applications. [PDF]
Babajans R, Cirjulina D, Kolosovs D.
europepmc +1 more source
HEK‐293T‐derived CD3ε Nb‐engineered EVs to generate dual‐targeting CAR‐T cells directly in vivo. These EVs selectively deliver CAR.BiTE transgenes into T cells and reprogramed to HLA‐G/PD‐L1‐targeting effector cells with enhanced memory and persistence.
Shi‐Wei Huang +27 more
wiley +1 more source
Editorial: Algorithm-hardware co-optimization in neuromorphic computing for efficient AI. [PDF]
Yousefzadeh A +3 more
europepmc +1 more source
A 64-WAY HYPERCUBE INTERCONNECTED SINGLE INSTRUCTION, MULTIPLE DATA ARCHITECTURE FOR FIELD PROGRAMMABLE GATE ARRAYS [PDF]
Katrina Jean-Marie Werger
openalex
ICONE23-1171 DESIGN OF A TRITIUM-IN-AIR-MONITOR USING FIELD PROGRAMMABLE GATE ARRAYS
Phillip McNelles, Lixuan Lu
openalex +1 more source
Microbial synthesis of nanomaterials (NMs) is eco‐friendly, but the screening of microorganisms is limited by inefficient traditional methods (currently only involving∽400 microorganisms/90 NMs). We propose AI framework MicrobeDiscover, integrating a knowledge graph of microbe‐NM interactions.
Ludi Wang +12 more
wiley +1 more source
Plasmonics Meets Metasurfaces: A Vision for Next Generation Planar Optical Systems. [PDF]
Butt MA.
europepmc +1 more source
Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo +16 more
wiley +1 more source

