Orbitronics: Mechanisms, Materials and Devices
Orbitronics, originating from the orbital angular momentum of the electrons, represents an emerging field for applications in memory devices, computing components, and terahertz emitters. This review summarizes recent achievements in orbitronics, highlights the differentiation of orbital mechanisms and the classification of orbital materials, and ...
Ping Wang+7 more
wiley +1 more source
High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates
The silicon nanowire field effect transistors integrated on flexible plastics reveal high electronic performance and mechanical stability under repeated bending cycles. The employment of in‐plane silicon nanowire channels enables precise alignment of transistor arrays.
Ting Zhang+4 more
wiley +1 more source
An optoelectronic synaptic transistor based on core‐multi‐shell quantum dots and Pentacene achieves a recognition capability under different light intensities that closely resembles that of the human eye. Under optimal light intensity, the recognition accuracy for the MNIST dataset can reach 91.52%.
Haonan Wang+8 more
wiley +1 more source
DESIGN AND IMPLEMENTATION OF GLOBAL POSITIONING SYSTEM RECEIVER IN FIELD PROGRAMMABLE GATE ARRAY WITH SHORT MESSAGE SERVICE [PDF]
G. Kavya, Vittal Thulasi Bai
openalex +1 more source
Neuron‐Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks
In this article, a biomolecular model neuron capable of integrating charge is proposed, evaluated, and simulated as a soft neuromorphic device. The device traps charge within microfluidic droplets using lipid membranes and voltage‐activated pores. The trapped charge produces electrowetting of the lipid interfaces, which facilitates multiple memory ...
Braydon Segars+5 more
wiley +1 more source
Introducing field-programmable gate arrays in genotype phasing and imputation. [PDF]
Wienbrandt L, Ellinghaus D.
europepmc +1 more source
Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor
Through the exploitation of the nonlinear Hall effect, an ultrahigh voltage responsivity (1.7×106 V W−1) is observed at room temperature in chiral tellurium nanosheets, a Weyl semiconductor with remarkable gate tunability. The voltage responsivity is orders of magnitude larger than those from other nonlinear Hall materials and even commercial Schottky ...
Hao Liu+8 more
wiley +1 more source
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger+8 more
wiley +1 more source
Configurable Multi-Layer Perceptron-Based Soft Sensors on Embedded Field Programmable Gate Arrays: Targeting Diverse Deployment Goals in Fluid Flow Estimation. [PDF]
Ling T+5 more
europepmc +1 more source