Results 201 to 210 of about 6,943 (308)

Dual‐Modulated Vertically Stacked Transistors With Fully Laminated Plate‐Type Architecture Featuring Nanoscale Channel Length

open access: yesAdvanced Science, EarlyView.
A new vertical transistor design with a dual‐modulation strategy is proposed to overcome the limitations of conventional transistors. This architecture uses a micro‐hole patterned electrode and a graphene electrode to enhance channel control and incorporates a leakage blocking layer to suppress off‐state current.
Goeun Pyo   +6 more
wiley   +1 more source

CD3ɛ Nanobody‐Engineered Extracellular Vesicles Driving In Vivo Generation of BiTE‐Secreting CAR‐Ts for Solid Tumor Therapy With Memory Response and Minimal Immunogenicity

open access: yesAdvanced Science, EarlyView.
HEK‐293T‐derived CD3ε Nb‐engineered EVs to generate dual‐targeting CAR‐T cells directly in vivo. These EVs selectively deliver CAR.BiTE transgenes into T cells and reprogramed to HLA‐G/PD‐L1‐targeting effector cells with enhanced memory and persistence.
Shi‐Wei Huang   +27 more
wiley   +1 more source

Editorial: Algorithm-hardware co-optimization in neuromorphic computing for efficient AI. [PDF]

open access: yesFront Neurosci
Yousefzadeh A   +3 more
europepmc   +1 more source

MicrobeDiscover: A Knowledge Graph–Enabled AI Framework for Identifying Microbes for Inorganic Nanomaterial Biosynthesis

open access: yesAdvanced Science, EarlyView.
Microbial synthesis of nanomaterials (NMs) is eco‐friendly, but the screening of microorganisms is limited by inefficient traditional methods (currently only involving∽400 microorganisms/90 NMs). We propose AI framework MicrobeDiscover, integrating a knowledge graph of microbe‐NM interactions.
Ludi Wang   +12 more
wiley   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

open access: yesAdvanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo   +16 more
wiley   +1 more source

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