Results 221 to 230 of about 2,910,611 (292)

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang   +8 more
wiley   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár   +12 more
wiley   +1 more source

A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High‐Bit RIS

open access: yesAdvanced Electronic Materials, EarlyView.
A general and efficient framework is proposed for the rapid design of high‐performance reconfigurable intelligent surfaces (RISs). This framework integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high‐performance RISs.
Jun Wei Zhang   +14 more
wiley   +1 more source

Lattice Dynamics Across the High‐Pressure Phase Transition in CrTe

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT High‐pressure physics provides a powerful means of tuning interatomic interactions, enabling the discovery of novel structural and physical phenomena in materials. Chromium telluride, a transition metal chalcogenide, is particularly responsive to such external stimuli, exhibiting a broad spectrum of pressure‐, temperature‐, and stoichiometry ...
Costanza Borghesi   +3 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

Advances in Thermoelectric Thin Films Grown by Atomic Layer Deposition: A Critical Review of Performance and Challenges

open access: yesAdvanced Energy Materials, EarlyView.
This review highlights the use of atomic layer deposition (ALD) for fabricating thermoelectric thin films with atomic‐scale control. Four material classes—chalcogenides, doped oxides, ternary oxides, and multilayered structures—are compared in terms of growth dynamics, structure–property relationships, and thermoelectric performance. The precise tuning
Jorge Luis Vazquez‐Arce   +5 more
wiley   +1 more source

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