Numerical Analysis of H-PDLC Using the Split-Field Finite-Difference Time-Domain Method. [PDF]
Bleda S +6 more
europepmc +1 more source
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll +17 more
wiley +1 more source
Finite-difference time-domain analysis of increased penetration depth in optical coherence tomography by wavefront shaping. [PDF]
Kim JU, Choi H, Park Y, Shin J.
europepmc +1 more source
A hybrid additive manufacturing platform integrates direct droplet writing of metallic composite with VAT photopolymerization to fabricate architected soft magnetic composites. This approach enables microscale patterning of high‐viscosity materials for programmable actuators, adaptive fluidic devices, and switchable adhesives, offering tunable ...
Yeowon Yoon +4 more
wiley +1 more source
Cell therapies typically rely on cold‐chain logistics and cryopreservation, limiting access and compromising cell quality. Here, a dual‐chamber device separates an oxygen‐supplying chamber from a hyaluronic acid cargo chamber, sustaining oxygen delivery for over 70 h and enabling ambient‐temperature shipment.
Daniel A. Domingo‐Lopez +9 more
wiley +1 more source
The Design and Optimization of Plasmonic Crystals for Surface Enhanced Raman Spectroscopy Using the Finite Difference Time Domain Method. [PDF]
Bigness A, Montgomery J.
europepmc +1 more source
Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang +3 more
wiley +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
A Single-Field Finite Difference Time-Domain Method Verified Using a Novel Antenna Design with an Artificial Magnetic Conductor Enhanced Structure. [PDF]
Qi Y +7 more
europepmc +1 more source
Study on Scattering and Absorption Properties of Quantum-Dot-Converted Elements for Light-Emitting Diodes Using Finite-Difference Time-Domain Method. [PDF]
Li J +5 more
europepmc +1 more source

