Results 91 to 100 of about 12,597 (299)
, 2004 This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains.
Wu NJ +2 more
core
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Receptor‐Free Identification of Toxic Gases Enabled by Hygroscopic Aqueous Salt Films
Advanced Functional Materials, EarlyView.Water as a gas sensor coating sounds impossible—until it stops evaporating. Here, hygroscopic salt solutions (LiCl, LiBr, H3PO4) form non‐drying aqueous films on CNT chemiresistors under ambient air. Gases partition into these liquid layers, sometimes transforming into water, and generate salt‐specific resistance fingerprints across a four‐channel ...
Seongwoo Lee +5 more
wiley +1 more source
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
Nanoscale Research Letters, 2011 Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated ...
Park Byoungjun +3 more
doaj
Survey and rehabilitation of the dry-dock main floating gate
Annals of "Dunărea de Jos" University of Galaţi: Fascicle XI ShipbuildingThe paper is a theoretical and practical approach to the uncommon way of rehabilitation of the dry-dock main gate of Damen Shipyards Galați. Most of the water tight system of the gate being under water and considering the improper condition of work in ...
Ovidiu Ionaș, Valentin Popescu
doaj +1 more source
AIP Advances, 2018 The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C–V) measurements in vacuum ...
Takaho Yokoyama +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A swelling‐programmed micropatterned hydrogel guides adherent cells through a controlled transition from cell–matrix anchoring to cadherin‐mediated cell–cell compaction, enabling rapid assembly of high‐viability spheroids with defined size and morphology.
Han Gyeol Nam +8 more
wiley +1 more source
Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Floating-gate silicon-oxygen-nitrogen-oxygen-silicon (SONOS) transistors can be used to train neural networks to ideal accuracies that match those of floating-point digital weights on the MNIST handwritten digit data set when using multiple devices to ...
Sapan Agarwal +8 more
doaj +1 more source
A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs
, 2011 A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads.
McNeill, Neville +4 more
core
Dual Floating Gate Flash Cell Using Single Poly Processes
, 2011 A novel memory device with dual floating-gate is investigated in this paper. The fabrication process of this device is compatible with the standard logic CMOS process flow using single gate poly.
Lei Liu +6 more
core +1 more source