Full‐Stack Architectures for Intelligent Brain‐Computer Interfaces
System‐level overview of brain–computer interfaces (BCIs), illustrating the integration of neural signal acquisition, wireless transmission, and adaptive decoding. Advanced electrode, tissue interfaces, energy‐efficient communication, and robust algorithms collectively enable stable signal quality, real‐time processing, and closed‐loop operation ...
Hee Kyu Lee +9 more
wiley +1 more source
Nanoscale photonic artificial neuron with biological signal processing. [PDF]
Sestoft JE +10 more
europepmc +1 more source
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Oligosaccharide Block Copolymers with Branched Architectures and Channel Energy Level Optimizations for High-Performance Floating Gate Phototransistor Memory. [PDF]
Yu PJ +6 more
europepmc +1 more source
Engineered Optogenetic Circuits In Yeast with Self‐Sustained Outputs
Optogenetic quorum‐sensing (OptoQS) circuit enables Saccharomyces cerevisiae to record transient light stimulus with self‐sustained outputs. Panel a indicates the design of the OptoQS circuit based on G‐protein coupled receptor (GPCR) signaling cascade. Panel b indicates the mode of action of surrogate messenger‐mediated signal transmission at the cell
Cong Fan +7 more
wiley +1 more source
Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]
Chung SW, Yoon SH, Jeong JK.
europepmc +1 more source
Device simulations in coupled floating-gate memories
Two device simulations were carried out to investigate the possibilities of nano sized floating-gate memories. In the first simulation, we calculated the characteristics of coupled floating-gate devices based on a conventional simulator. We found that the memory performance is improved by coupling two floating gates. In the second simulation, we showed
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Unconventional Hysteretic Charge Filling in Moiré‐Reconstructed Helical Trilayer Graphene
In helical trilayer graphene, sequential twisting reconstructs the moiré landscape into periodic domains separated by aperiodic boundaries. Longitudinal transport reveals sweep‐direction‐dependent hysteresis, while the Hall response traces this behavior to hysteretic charge filling at the aperiodic boundaries.
Hangyeol Park +9 more
wiley +1 more source
Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Kang HY +4 more
europepmc +1 more source

