Results 51 to 60 of about 20,361 (264)
Behavioral model of a semiconductor opening switch (SOS)
AIP AdvancesThis paper presents a comprehensive experimental investigation and SPICE-based behavioral model of semiconductor opening switch devices developed using a MOSFET-driven testbed.
H. Spencer +8 more
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Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
IEEE Access, 2020 For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics.
Ahid S. Hajo +4 more
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FEBS Open Bio, EarlyView.Mouse pre‐implantation development involves a transition from totipotency to pluripotency. Integrating transcriptomics, epigenetic profiling, low‐input proteomics and functional assays, we show that eight‐cell embryos retain residual totipotency features, whereas cytoskeletal remodeling regulated by the ubiquitin‐proteasome system drives progression ...
Wanqiong Li +8 more
wiley +1 more source
Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode
Kongzhi Yu Xinxi Jishu, 2016 In order to research the effect of temperature on static electrical parameters of 4H–SiC junction barrier Schottky (JBS) diode,1.2 kV 4H–SiC JBS diodes were fabricated and their current-voltage characteristics were measured in the range of 25 ℃ ~150 ...
YUAN Hao +5 more
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FEBS Open Bio, EarlyView.Enzymes of the 2‐hydroxyacyl‐CoA lyase group catalyze the condensation of formyl‐CoA with aldehydes or ketones. Thus, by structural adaptation of active sites, practically any pharmaceutically and industrially important 2‐hydroxyacid could be biotechnologically synthesized. Combining crystal structure analysis, active site mutations and kinetic assays,
Michael Zahn +4 more
wiley +1 more source
Design of Diamond Power Devices: Application to Schottky Barrier Diodes
Energies, 2019 Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents ...
Nicolas Rouger, Aurélien Maréchal
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Single‐molecule DNA flow‐stretch assays for high‐throughput DNA–protein interaction studies
FEBS Open Bio, EarlyView.We describe an optimised single‐molecule DNA flow‐stretch assay that visualises DNA–protein interactions in real time. Linear DNA fragments are tethered to a surface and stretched by buffer flow for fluorescence imaging. Using λ and φX174 DNA, this protocol enhances reproducibility and accessibility, providing a versatile approach for studying diverse ...
Ayush Kumar Ganguli +8 more
wiley +1 more source
IEEE AccessA novel center-tapped rectifier with current-balancing and voltage-clamped (CBVC) capability for the LLC resonant converter is proposed. A secondary capacitor is inserted between the contact points of the rectifier diode and the secondary winding of the ...
Keon-Woo Kim +2 more
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Evolutionarily divergent DUF4465 domains have a common vitamin B12‐binding function
FEBS Open Bio, EarlyView.We show that DUF4465 family proteins, widespread across bacteria from gut microbiomes, hydrothermal vents, and soil, share a common vitamin B12‐binding function. These augmented β‐jellyroll proteins bind vitamin B12 via extended loops. Our findings establish sequence‐diverse DUF4465 proteins as a widespread class of B12‐binding proteins, highlighting ...
Charlea Clarke +4 more
wiley +1 more source
Technology Status and Development of SiC GTO Thyristor
Kongzhi Yu Xinxi Jishu, 2016 In recent years, high-voltage power devices based on wide-band gap semiconductor material such as silicon carbide (SiC)have developed rapidly. Among high voltage SiC power devices, gate turn-off thyristor (GTO) has advantages such as high blocking ...
WANG Jun +3 more
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