Results 61 to 70 of about 39,787 (265)

Multispectral UV Imaging on Capacitive CMOS Arrays Enabled by Solution‐Processed Metal‐Oxide Nanoparticles

open access: yesAdvanced Science, EarlyView.
Ultraviolet (UV) imagers are important for a variety of applications but often require dedicated semiconductor process flows. Here, a versatile capacitive CMOS platform is transformed into a visible‐blind, multispectral UV imager through post‐CMOS functionalization with solution‐processed metal‐oxide nanoparticles. The UV‐induced photodielectric effect
Suman Kundu   +5 more
wiley   +1 more source

Practical learnings from a research engagement process involving youth with lived experience of suicidality

open access: yesResearch Involvement and Engagement
Suicide remains a leading cause of death among youth in Canada, yet youth with lived experience are rarely involved in shaping suicide research activities, data interpretation, or reporting.
Katherine G. Hastings   +8 more
doaj   +1 more source

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures

open access: yesAdvanced Science, EarlyView.
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher   +7 more
wiley   +1 more source

Assessing Swedish Foundries Energy Management Program

open access: yesEnergies, 2018
With regard to increased sustainability, managers not only need to know WHAT is needed for their company to improve, but also HOW to do so in detail is equally important.
Aida Sa   +3 more
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

On the Conduction Mechanism in Diamond 2-D Hole Gas Field Effect Transistors

open access: yesIEEE Access
Diamond two-dimensional hole gas (2DHG) field-effect transistors are an emerging device class with significant practical potential. To date, hole mobility in such devices has been largely assessed using Hall effect measurements, with only limited ...
Andrew J. Walker   +3 more
doaj   +1 more source

Essex Foundry records, MSS.0490

open access: yes, 1916
: Incorporation papers, by-laws, directors' minutes, minutes of stockholders' meetings, and related records.Scope and Content Note: The collection contains the incorporation papers, by-laws, directors' minutes, minutes of stockholders' meetings, and ...
Essex Foundry
core  

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Local Acidity as a Corrosiveness Descriptor of Fluorinated Ether Solvents in Lithium–Metal Batteries

open access: yesAngewandte Chemie, EarlyView.
Adjusting the extent of solvent fluorination reveals a trade‐off between the solvation power and solvent acidity of electrolytes for lithium–metal batteries (LMBs). F4MEP is within the optimal window and balances anion‐rich solvation with suppressed Li corrosion for stable interphase formation to extend the cycle life of LMBs.
Dongmin Park   +10 more
wiley   +2 more sources

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy