The Development of Frequency Tripler Based on Six-Anode Schottky Varactors [PDF]
Micromachines, 2021 The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration.
Yuhang Li +3 more
doaj +2 more sources
A Wideband D-Band Frequency Sextupler Chain with High Harmonic Rejection in 100 nm GaAs pHEMT Technology [PDF]
MicromachinesThis paper presents a wideband D-band frequency sextupler chain implemented in a 100 nm GaAs pHEMT process. The proposed circuit comprises an input-stage frequency tripler, an inter-stage harmonic-rejection power amplifier, and an output-stage frequency ...
Pinqing Wang +4 more
doaj +2 more sources
Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications [PDF]
Nano-Micro Letters, 2022 Highlights Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed.
Minjong Lee +8 more
doaj +2 more sources
Reconfigurable frequency multipliers based on graphene field-effect transistors [PDF]
Discover Nano, 2023 Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density.
A. Toral-Lopez +6 more
doaj +2 more sources
MODERNIZATION OF THE KHARKIV MICROWAVE SPECTROMETER: CURRENT STATE [PDF]
Radio Physics and Radio Astronomy, 2023 Subject and Purpose. Results are presented of the recent considerable upgrade implemented at the Kharkiv microwave spectrometer. The upgrade has been aimed at extending the operating frequency range and increasing the utmost accessible spectral ...
E. A. Alekseev +4 more
doaj +1 more source
A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network
IEEE Access, 2023 A 0.78–0.91-THz wideband frequency tripler is demonstrated using a 250-nm InP DHBT technology. Considering potential inaccuracy of the transistor model at the submillimeter-wave frequencies, a simple one-stage common-emitter topology is adopted ...
Kyeongho Yeom +3 more
doaj +1 more source
Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes
IEEE Access, 2020 In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is ...
Yilin Yang +6 more
doaj +1 more source
275 GHz Quadrature Receivers for THz-Band 6G Indoor Network in 130-nm SiGe Technology
IEEE Access, 2023 We report two 275-GHz quadrature receivers (Rx’s) with mixer-first and LNA-first architectures in a 130-nm SiGe BiCMOS process. Both quadrature Rx’s contain I and Q mixers implemented with a modified Gilbert-cell mixer with swapped RF and ...
Jeong-Moon Song +3 more
doaj +1 more source
IEEE Access, 2020 This paper reports on the monolithic integration of layout-optimized Schottky diodes realized in an established 50-nm gate-length metamorphic high-electron-mobility transistor technology for use in multifunctional nonlinear circuits.
Fabian Thome +6 more
doaj +1 more source
Single-Stage Injection-Locked Frequency Sixtupler in CMOS Process
IEEE Access, 2022 High multiplication-factor even-modulus frequency multipliers are often configured as multi series frequency multipliers. This paper designs a single-stage $LC$ -tank injection locked frequency sixtupler (ILFS) fabricated in $0.18~\mu \text{m}$ CMOS ...
Sheng-Lyang Jang +2 more
doaj +1 more source