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2023
The Minor Planet Electronic Circulars contain information on unusual minor planets, routine data on comets and natural satellites, and occasional editorial announcements. They are published on behalf of Division F of the International Astronomical Union by the Minor Planet Center, Smithsonian Astrophysical Observatory, Cambridge, MA 02138, U.S.A.
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The Minor Planet Electronic Circulars contain information on unusual minor planets, routine data on comets and natural satellites, and occasional editorial announcements. They are published on behalf of Division F of the International Astronomical Union by the Minor Planet Center, Smithsonian Astrophysical Observatory, Cambridge, MA 02138, U.S.A.
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Materials Letters, 2018
Abstract Ga3+-diffused lithium tantalate (LiTaO3) strip optical waveguide was fabricated by diffusion (at 950 °C for 1.5 h) of 8-μm wide, 112-nm thick Ga2O3-strips photolithographically patterned onto a Z-cut congruent LiTaO3 substrate. Crystalline phase, composition, optical properties and profile characteristics of Ga3+ ions in the waveguide were ...
Shuai Ren +6 more
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Abstract Ga3+-diffused lithium tantalate (LiTaO3) strip optical waveguide was fabricated by diffusion (at 950 °C for 1.5 h) of 8-μm wide, 112-nm thick Ga2O3-strips photolithographically patterned onto a Z-cut congruent LiTaO3 substrate. Crystalline phase, composition, optical properties and profile characteristics of Ga3+ ions in the waveguide were ...
Shuai Ren +6 more
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Enhanced photocatalytic performance of Ga3+-doped ZnO
Materials Research Bulletin, 2012Abstract ZnO and Ga 3+ -doped ZnO with different molar ratio of Ga/Zn (1%, 2% and 3%) were prepared by a parallel flow precipitation method. The photocatalysts prepared were characterized by BET surface area, X-ray diffraction (XRD), UV/vis diffuse reflectance spectroscopy (DRS), scanning electron microscope (SEM) and surface photovoltage ...
Jun Bo Zhong +5 more
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A Structural Investigation of Ga3−xIn5+xSn2O16
Journal of Solid State Chemistry, 1998The structure of the recently reported transparent conductor, Ga3−xIn5+xSn2O16(0 ...
D.D. Edwards +5 more
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Journal of Membrane Science, 1996
Abstract The specific interaction of N-octadecanoyl-N-phenylhydroxylamine (ODPHA) and Ga3+ was evaluated by the Langmuir-Blodgett method. The surface pressure-area isotherm for ODPHA on a Ga 3+ Al 3+ solution containing a 388 excess of Al3+ at pH 2.4 was similar to the isotherm for ODPHA on a pure Ga3+ solution at the same pH.
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Abstract The specific interaction of N-octadecanoyl-N-phenylhydroxylamine (ODPHA) and Ga3+ was evaluated by the Langmuir-Blodgett method. The surface pressure-area isotherm for ODPHA on a Ga 3+ Al 3+ solution containing a 388 excess of Al3+ at pH 2.4 was similar to the isotherm for ODPHA on a pure Ga3+ solution at the same pH.
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Exogenous GA3 increases rubisco activation in soybean leaves
Journal of Plant Biology, 2001We studied the effect of exogenous applications of GAon3 on rubisco activation in soybean leaves. Activity at 0.1 μM GA3 was significantly greater than in leaves receiving no treatment Rubisco content snowed patterns of change similar to that for activity.
Kwang Soo Roh +6 more
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Relaxation of Gallium Nuclei in Ga3+-Doped YIG
Journal of Applied Physics, 1967We report a study of the NMR of gallium impurities in YIG. In this magnetic system a nonmagnetic impurity is added to a ferrimagnetic host where the observed nucleus is located at the magnetic defect site. This nucleus is coupled to the surrounding magnetic ions by a transferred hyperfine interaction, similar in form to the Heisenberg interaction ...
R. H. Tancrell, R. V. Jones
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Temperature Dependence of Ga3+-Doped CaS:Eu2+ Phosphors
2018The temperature dependence of the photoluminescence spectra of Ga3+-doped CaS:Eu2+ phosphors were investigated. The results showed that at room temperature, the peak position was blue shifted by increasing the Ga3+ concentration from 0 to 0.2 mol.
Na Zhang +6 more
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Site occupancy of Ga3+ in NiGaxFe2-xO4 ferrites
Journal of Magnetism and Magnetic Materials, 1986Abstract Mossbauer spectra of the NiGa x Fe 2- x O 4 system were obtained at 11 K and the ratio of line intensities were determined. Results show that a high concentration Ga 3+ does not enter completely in A-sites. The lattice constant decreases linearly with the mean ionic tetrahedral radius.
C. Quintanar +4 more
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