Results 21 to 30 of about 1,907 (200)

Solar heating of GaAs nanowire solar cells

open access: yesOptics Express, 2015
We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure.
Shao-Hua, Wu, Michelle L, Povinelli
openaire   +2 more sources

Improved design of InGaP/GaAs//Si tandem solar cells

open access: yesEPJ Photovoltaics, 2021
Optimizing any tandem solar cells design before making them experimentally is an important way of reducing development costs. Hence, in this work, we have used a complete analytical model that includes the important effects in the depletion regions of ...
Torres-Jaramillo Santiago   +2 more
doaj   +1 more source

GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

open access: yesEnergies, 2023
Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells.
Yeonhwa Kim   +10 more
doaj   +1 more source

Hydrodynamic and Energy Transport Model-Based Hot-Carrier Effect in GaAs pin Solar Cell

open access: yesElectronic Materials, 2022
The hot-carrier effect and hot-carrier dynamics in GaAs solar cell device performance were investigated. Hot-carrier solar cells based on the conventional operation principle were simulated based on the detailed balance thermodynamic model and the ...
Tomah Sogabe   +2 more
doaj   +1 more source

Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

open access: yesInternational Journal of Photoenergy, 2013
This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as ...
Ray-Hua Horng   +2 more
doaj   +1 more source

Effect the Technique of Light Trapping on the Performance of Simple Junction n-p Solar Cells Based on GaAs and Si [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
Light trapping enhances the absorption of active materials in photovoltaic cells. The use of light trapping results in a thinner active region in a solar cell, which lowers the production cost by reducing the amount of material used, and increases the ...
S. Nour, A. Belghachi
doaj   +1 more source

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

open access: yesCrystals, 2023
We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented GaAs
Jacob T. Boyer   +8 more
doaj   +1 more source

Limiting efficiencies of GaAs solar cells [PDF]

open access: yesIEEE Transactions on Electron Devices, 1990
The limiting efficiencies of GaAs solar cells when used under concentrated sunlight are calculated. The benefits to be expected from applying techniques which restrict the angle of acceptance of the cell are determined. It is concluded that when the acceptance angle is restricted the emission of the luminescent photons and therefore the associated ...
Martí Vega, Antonio   +1 more
openaire   +2 more sources

Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

open access: yesInternational Journal of Photoenergy, 2013
The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes.
Kangho Kim   +3 more
doaj   +1 more source

Experiment Study on Displacement Damage Effect on GaInP/GaAs/Ge Triple Junction Solar Cell Irradiated by 100 MeV Proton

open access: yesYuanzineng kexue jishu, 2023
GaInP/GaAs/Ge triple junction solar cells have the advantages of high reliability, long life, and high photoelectric conversion efficiency, making them the core components of current spacecraft space power systems. However, the radiation particles in the
WANG Zujun1;YIN Liyuan2;WANG Xinghong3;ZHANG Qi4;TANG Ning5;GUO Xiaoqiang1;SHENG Jiangkun1;GOU Shilong1;YAN Shixing5;LI Chuanzhou5
doaj   +1 more source

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