Results 161 to 170 of about 196,124 (292)

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang   +6 more
wiley   +1 more source

High‐Density and Scalable Graphene Hall Sensor Arrays Through Monolithic CMOS Integration

open access: yesAdvanced Electronic Materials, EarlyView.
This work explores strategies to create high‐density arrays of graphene Hall‐effect magnetic field sensors through monolithic integration with silicon CMOS biasing and multiplexing circuitry. High sensor yield and magnetic sensing performance are achieved through careful choices in the custom CMOS chip design and the graphene integration process.
Vasant Iyer   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Large Field‐Like Orbital Torque in FeNi/Cr Heterostructures

open access: yesAdvanced Electronic Materials, EarlyView.
Orbital torque enables field‐free magnetization switching in spintronics. FeNi/Cr heterostructures exhibit a large field‐like orbital torque. This torque originates from a tilted orbital current polarization within the Cr layer, producing a significant z‐component.
Zhendong Chen   +15 more
wiley   +1 more source

Gadolinium Deposition in the Brain and Body

open access: yesJournal of the Belgian Society of Radiology, 2019
Aart J. van der Molen
doaj   +1 more source

Impact of Recanalization on Liver Hypertrophy after Portal Vein Embolization and the Role of Re‐Embolization

open access: yesAnnals of Gastroenterological Surgery, EarlyView.
This retrospective study of 249 patients undergoing hepatectomy after right portal vein embolization (PVE) demonstrated that major recanalization–defined as recanalization more than one segment within the embolized liver–was associated with impaired regeneration of the future liver remnant (FLR).
Masao Uemura   +9 more
wiley   +1 more source

Catalysis AI Agent Guides Discovering the Universal Design Principle of Cu‐Based Single‐Atom Alloy Catalysts for CO2 Electroreduction

open access: yesAngewandte Chemie, EarlyView.
Artificial intelligence (AI) enables the systematic analysis and comparative evaluation of experimental and theoretical data, optimizes the catalytic reaction research workflow, and accelerates the discovery of high‐performance electrocatalysts. ABSTRACT Copper (Cu)‐based single‐atom alloys (SAAs) represent a promising strategy for optimizing the ...
Xuning Wang   +5 more
wiley   +2 more sources

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