Results 111 to 120 of about 164,670 (298)

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

open access: yes, 2008
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions.
Cros, D.   +5 more
core   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

SyNTHESIS OF GALLIUM SULFATE

open access: yesТонкие химические технологии, 2017
Trivalent gallium compounds are structural analogs of the elements with variable valency in (+3) oxidation state that can be used as cathode materials for electrochemical power devices (iron, vanadium, chromium).
V. Yu. Proydakova   +3 more
doaj   +1 more source

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Radiation damage [PDF]

open access: yes
The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium ...
Weinberg, I.
core   +1 more source

Total immersion crystal growth [PDF]

open access: yes, 1987
Crystals of wide band gap materials are produced by positioning a holder receiving a seed crystal at the interface between a body of molten wide band gap material and an overlying layer of temperature-controlled, encapsulating liquid.
Morrison, Andrew D.
core   +1 more source

Covalent Organic Frameworks for Photocatalytic CO2 Reduction: Metal Integration Principles, Strategies and Functions

open access: yesAdvanced Functional Materials, EarlyView.
Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He   +5 more
wiley   +1 more source

Research and prospect of gallium recovery technology in zinc smelting

open access: yes工程科学学报
Gallium is an important dispersive metal with widespread applications in high-tech fields such as semiconductor materials, optoelectronics, and radio technology.
Wei ZHANG   +4 more
doaj   +1 more source

3D‐Printed Porous Hydroxyapatite Formed via Enzymatic Mineralization

open access: yesAdvanced Functional Materials, EarlyView.
Bone combines lightness, strength, and the ability to heal, inspiring new materials design. This work introduces a room‐temperature, enzyme‐mediated 3D printing method to create porous hydroxyapatite scaffolds. The process avoids energy‐intensive sintering, preserves bioactivity, and allows control over porosity and mineralization.
Francesca Bono   +6 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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