Results 191 to 200 of about 272,374 (381)
Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium Arsenide [PDF]
, 1966 J.C. Brice, G. D. KING
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Defects in Inorganic Mechanoluminescent Phosphors: Insights and Impacts
Advanced Functional Materials, EarlyView.Mechanoluminescence is attracting more attention recently, and defect dominates mechanoluminescence performances. Investigating how defects work in the mechanoluminescence process is crucial for elucidating its complex luminescence mechanism. This review aims to emphasize the fundamental role of defects in mechanoluminescence, which offers an ...
Wenhao Li +3 more
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Distribution of Radioactive Gallium in the Teeth and Jaws of Experimental Animals
, 1950 James English, H. C. Dudley
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Order in the ζ' phase of the silver–gallium alloys [PDF]
, 1964 R. Stratton, W J Kitchingman
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Advanced Functional Materials, EarlyView.Sulfur‐capped mesoporous PtPbBi nanosheets (S‐PtPbBi MNSs) with an alloy/intermetallic compound heterophase and inhomogeneous tensile strain (≈3%) were synthesized by a thiol modification strategy, which exhibited excellent electrocatalytic performance for ethylene glycol oxidation reaction (EGOR).
Fukai Feng +14 more
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Coordination compounds of methyl gallium hydrides [PDF]
, 1969 Alan Storr, Victor Graham Wiebe
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Guest Editorial: The dawn of gallium oxide microelectronics
, 2018 M. Higashiwaki, G. Jessen
semanticscholar +1 more source
Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics
Advanced Functional Materials, EarlyView.An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong +7 more
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Advanced Functional Materials, EarlyView.Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi +13 more
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