Results 1 to 10 of about 12,610 (226)
Mixer-detector and multiplier diodes for microwave receiver mixers
Технологія та конструювання в електронній апаратурі, 2003 Original designs of gallium arsenide Schottky barrier diodes are described, which are successfully used in frequency converters of the centimeter and millimeter wavelength ranges.
S. V. Bobzhenko +5 more
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MODELLING OF AVERAGE DRIFT SPEED OF ELECTRONS IN ONE-DIMENSIONAL STRUCTURE FROM GALLIUM ARSENIDE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of average drift speed of electrons are given in one-dimensional structure from gallium arsenide. Recommendations about a choice of sizes of a temporary step and length of a spatial cell which define procedure of numerical modeling are ...
V. N. Mishchenka
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Changes in low-frequency noise in p-n junctions at low temperatures
Технологія та конструювання в електронній апаратурі, 2004 The results of experimental studies of a gallium arsenide diode in the temperature range of 78–300 K are presented. It is proposed that, when designing equipment, the operational stability of semiconductor sensors in the low-temperature range be ...
A. G. Golovko
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INTERKONEKSI IC DIGITAL BERBAHAN GALLIUM ARSENIDE (GaAs)
Techne, 2011 Tata letak keping IC Digital berbahan GaAs memerlukan interkoneksi untuk keperluan konsumsi daya dan transmisi sinyal. Interkoneksi bahan GaAs perlu perhatian khusus karena transisi dengan kecepatan tinggi akan menghasilkan derau pada interkoneksi. Derau
Andreas Ardian Febrianto
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Some of the next articles are maybe not open access.
Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
Toxicology and Applied Pharmacology, 2004Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
Akiyo Tanaka
exaly +3 more sources
Evaluation of the carcinogenicity of gallium arsenide
Critical Reviews in Toxicology, 2013Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings.
Samuel M Cohen
exaly +3 more sources
1993
This chapter is from the book Encyclopedia of Applied Physics. This 23 volume encyclopedia unites the concept of modern physics with their numerous technical applications. It covers modern technologies where most of the work is done by engineers, but where physics research is a necessary part of further developments.
R.M. Feenstra, Joseph A. Stroscio
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This chapter is from the book Encyclopedia of Applied Physics. This 23 volume encyclopedia unites the concept of modern physics with their numerous technical applications. It covers modern technologies where most of the work is done by engineers, but where physics research is a necessary part of further developments.
R.M. Feenstra, Joseph A. Stroscio
openaire +3 more sources
Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate
Thin Solid Films, 1977Abstract The infrared reflectance of a thin film of GaAs on a GaAs substrate was measured for several samples of the type n n + and n + n . The reflectance was analyzed to determine the carrier density and mobility of film and substrate and the thickness of the film.
E.D. Palik, R.T. Holm, J.W. Gibson
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Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors
1966 International Electron Devices Meeting, 1966Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
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Gallium-arsenide diffused diodes
1959 International Electron Devices Meeting, 1959Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Halpern, J. Lowen, R.H. Rediker
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