Results 21 to 30 of about 67,140 (213)
Gallium arsenide buffer amplifier
The circuitry of a buffer amplifier (BA) implemented on gallium arsenide n-channel field-effect transistors with a control p-n junction and gallium arsenide bipolar p-n-p transistors is considered.
Klejmenkin D.V. (11834428) +3 more
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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]
The goal of integrated optoelectronics is to monolithically integrate optoelectronic components with purely electronic components. In this paper we describe the demonstration of the monolithic integration of a laser, a transistor and a photodiode.
Bar-Chaim, N. +3 more
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Integration of Refractive Microlenses on BP/MoS<sub>2</sub> Photodiodes for Enhanced Infrared Photodetection. [PDF]
This study demonstrates the successful integration of black phosphorus/molybdenum disulfide infrared photodetectors with refractive microlenses to significantly enhance detection. The design achieves a 20‐fold photocurrent enhancement, enabling a room‐temperature detectivity of 1.83 × 109 cmHz1/2W−1, and demonstrates high‐resolution (1023 × 768) single‐
Vedaraj VA +11 more
europepmc +2 more sources
Study of gallium arsenide by a novel vacuum electroreflectance apparatus.
Study of gallium arsenide by a novel vacuum electroreflectance ...
Silvia Livia Corina. Mioc (7977863)
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Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators
The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics.
El-Hageen Hazem M. +2 more
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Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang +4 more
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Gallium interstitial contributions to diffusion in gallium arsenide
A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A.
Joseph T. Schick, Caroline G. Morgan
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SOLAR CELLS BASED ON GALLIUM ARSENIDE
Solar panels made using gallium arsenide (a compound of gallium and arsenic) are an alternative to traditional silicon solar cells. Gallium arsenide is a semiconductor that has the same solar energy properties as silicon, but is more efficient in terms ...
Mamarasulova Hanifa Dilshod qizi, Halilova Dilshoda Obid qizi +2 more
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Characterization of arsenic-rich waste slurries generated during gallium arsenide wafer lapping and polishing [PDF]
The toxicology of gallium arsenide is well established; it is classified by the state of California as a known carcinogen. Consequently, environmental aspects of GaAs wafer manufacture are coming under greater scrutiny, with the cost of waste disposal ...
Keenan, H.E., Torrance, K.
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This chapter is from the book Encyclopedia of Applied Physics. This 23 volume encyclopedia unites the concept of modern physics with their numerous technical applications. It covers modern technologies where most of the work is done by engineers, but where physics research is a necessary part of further developments.
R.M. Feenstra, Joseph A. Stroscio
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