Results 21 to 30 of about 4,377 (195)

Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators

Open Engineering, 2020
The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics.
El-Hageen Hazem M., Alatwi Aadel M., Rashed Ahmed Nabih Zaki   +2 more
doaj   +1 more source

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Crystals, 2023
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang, Gagan Kumar Chappa, Lucas Vieira, Martin Holena, Natasha Dropka   +4 more
doaj   +1 more source

Gallium interstitial contributions to diffusion in gallium arsenide

AIP Advances, 2011
A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A.
Joseph T. Schick, Caroline G. Morgan
doaj   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater

Gongye shui chuli
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao, YANG Jun, CHANG Hai, GENG Tianchi, WU Yuchong, LIU Jingjing, WANG Yuyu, WU Yun, CHEN Yingbo   +8 more
doaj   +1 more source

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

EPJ Web of Conferences, 2013
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X., Perkins B. G., Brandt N. C., Sternbach A., Strikwerda A. C., Zhang J., Fan K., Liu M., Hwang H. Y., Averitt R. D., Nelson K. A.   +10 more
doaj   +1 more source

Flexible and Scalable 2D/3D Tin‐Based Perovskite Photodetectors via Inkjet Printing

Advanced Optical Materials, EarlyView.
Lead‐free tin‐based perovskite films are successfully fabricated via scalable inkjet printing on rigid and flexible substrates. Incorporating high‐purity precursors and dual‐layer encapsulation minimizes defects and eliminates oxidation. The resulting photodetectors demonstrate high responsivity, persistent photoconductivity, and excellent 30 day ...
Giovanni Vescio, Vladimir S. Chirvony, Isaac Suárez, Sandra Soriano, Jesús Sanchez‐Diaz, Wiktor Żuraw, Łukasz Przypis, Senol Öz, Kenneth Lobo, Sergi Hernández, Albert Cirera, Iván Mora‐Seró, Blas Garrido, Juan P. Martínez‐Pastor   +13 more
wiley   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Systematic Phosphorus‐Driven Structural and Field Engineering of n‐a‐Si:H for Flexible n‐a‐Si:H/Te Near‐Infrared Photodetectors

Advanced Science, EarlyView.
Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Kyeong‐jin Hyun, Soo‐Won Choi, Byeongjin Park, Hee‐Won Jang, Jongwon Yoon, Yonghun Kim, Woon Ik Park, Jung‐Dae Kwon   +7 more
wiley   +1 more source