Results 21 to 30 of about 34,697 (226)

Subcycle Wannier-Stark Localization by Mid-Infrared Bias in Gallium Arsenide [PDF]

EPJ Web of Conferences, 2019
The fundamental interband absorption in gallium arsenide shows a strong blue shift when biased by mid-infrared transients exceeding 10 MV/cm. This subcycle feature is induced by the localization of electronic wavefunctions from 3D to 2D.
Bühler Johannes, Schmidt Christian, Heinrich Alexander-Cornelius, Allerbeck Jonas, Podzimski Reinold, Berghoff Daniel, Meier Torsten, Schmidt Wolf Gero, Reichl Christian, Wegscheider Werner, Brida Daniele, Leitenstorfer Alfred   +11 more
doaj   +1 more source

Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method

Crystals, 2023
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang, Gagan Kumar Chappa, Lucas Vieira, Martin Holena, Natasha Dropka   +4 more
doaj   +1 more source

Gallium interstitial contributions to diffusion in gallium arsenide

AIP Advances, 2011
A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A.
Joseph T. Schick, Caroline G. Morgan
doaj   +1 more source

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

EPJ Web of Conferences, 2013
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X., Perkins B. G., Brandt N. C., Sternbach A., Strikwerda A. C., Zhang J., Fan K., Liu M., Hwang H. Y., Averitt R. D., Nelson K. A.   +10 more
doaj   +1 more source

Electronic structure simulation of gallium arsenide clusters [PDF]

, 2009
Semiconductor clusters have occupied the centre of scientific interest because of their unique electronic nature. Among the group III-V compound clusters, the gallium arsenide clusters have been the focus of this research due to their importance in ...
Musa, Nor Muniroh
core  

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater

Gongye shui chuli
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao, YANG Jun, CHANG Hai, GENG Tianchi, WU Yuchong, LIU Jingjing, WANG Yuyu, WU Yun, CHEN Yingbo   +8 more
doaj   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

The Role of Ultra‐Thin Buffer Layers for Achieving Ultra‐Low Dark Currents in Single‐Component Organic Photodetectors

Advanced Functional Materials, EarlyView.
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber, Ying Sun, Jakob Wolansky, Louis Conrad Winkler, Anna‐Lena Hofmann, Fred Kretschmer, Hrisheekesh Thachoth Chandran, Tianyi Zhang, Mike Hambsch, Stefan C. B. Mannsfeld, Karl Leo, Ji‐Seon Kim, Johannes Benduhn   +12 more
wiley   +1 more source

Whiskerless Schottky diode [PDF]

, 1991
A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon ...
Bishop, William L., Mattauch, Robert J., Mcleod, Kathleen A.   +2 more
core   +1 more source