Results 41 to 50 of about 12,610 (226)
Advanced Electronic Materials, EarlyView.A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun +5 more
wiley +1 more source
Structure‐Function Tailoring of Plasmonic Nanomaterials for Thin‐Film Photovoltaics
Carbon Energy, EarlyView.This review discusses the mechanisms and recent advancements of plasmonics in achieving effective light management to enhance the performance of thin‐film solar cells. It highlights applications in high‐performance perovskite solar cells and future‐oriented tandem solar cells.
Sen Jiang +14 more
wiley +1 more source
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]
, 2007 : Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Moran, D.A.J. +8 more
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Journal of Low Power Electronics and ApplicationsIn this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava +4 more
doaj +1 more source
Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
Active and Passive Electronic Components, 1998 An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj +1 more source
Valence band engineering of GaAsBi for low noise avalanche photodiodes
Nature Communications, 2021 An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu +8 more
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Coulometric titration of gallium in gallium arsenide.
BUNSEKI KAGAKU, 1990 電量滴定法によりヒ化ガリウム中のガリウムの定量を行った.分析方法としては,ガリウムに対して過剰のEDTAを加えてキレート生成させて,過剰分を電解発生させた銅(II)イオンで逆滴定するという手法を採った.そこでEDTAの純度分析を行ったところ,銅(II)イオンによる滴定条件において基礎液の濃度とpH調節が重要であった.又滴定終点は,ポテンショスタットで電位規制した作用電極上での銅(II)イオンの還元電流を利用して決定した.EDTAの純度分析の結果は99.749%となり,この値に基づいて高純度ガリウムの定量,更にヒ化ガリウム中のガリウムの定量を行った.ヒ化ガリウムを試料とした場合には共存するヒ素(V)の影響が大きいことから,ヒ素(III)への還元操作を加えた ...
NAKAYAMA, Shigeyoshi +2 more
openaire +2 more sources
Carbon Energy, EarlyView.A full‐spectrum solar‐driven tandem electrolysis system enables efficient CO2‐to‐acetate conversion by spectrally splitting sunlight and coupling high‐temperature SOEC CO2‐to‐CO electrolysis with ambient CO reduction. The integrated design achieves a solar‐to‐acetate efficiency of 15.8%, demonstrating effective energy‐quality matching for solar carbon ...
Shangchun Su +8 more
wiley +1 more source
Optical spectroscopy of thin film semiconductor structures [PDF]
, 1997 This thesis consists of a study of several thin film semiconductor structures of practical technological use either presently or in the near future. The first system studied is an ultra thin film single crystal gallium arsenide layer.
Eggleston, J.M. +1 more
core
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj