Results 41 to 50 of about 67,140 (213)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj
Journal of Low Power Electronics and ApplicationsIn this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava +4 more
doaj +1 more source
Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
Active and Passive Electronic Components, 1998 An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj +1 more source
Diffusion of sulfur in gallium phosphide and gallium arsenide [PDF]
, 1969 Radiotracer technique for sulfur diffusion in gallium phosphide and arsenide as function of temperature and ...
Young, A. B. Y.
core
Autonomous Charging and Battery Swapping for Unmanned Aerial Vehicles: A Review
Advanced Intelligent Systems, EarlyView.This review evaluates major autonomous charging and battery swapping methods for unmanned aerial vehicles (UAVs) against a single question: how close each is to sustained unattended operation. Rather than ranking them by charging performance, it identifies the limitation that most restricts each method, and briefly outlines the supporting technologies ...
Zelin Wu +5 more
wiley +1 more source
Advanced Physics Research, EarlyView.The mechanism and kinetics of selective GaAs growth on Si nanotip wafers via nanoheteroepitaxy were investigated as a function of pitch (center‐to‐center nanotip spacing). The pitch dependence reveals distinct surface‐diffusion‐controlled regimes, demonstrating that lateral Ga adatom transport on the SiO2 mask governs material redistribution and ...
Adriana Rodrigues +6 more
wiley +1 more source
Carbon Energy, EarlyView.A full‐spectrum solar‐driven tandem electrolysis system enables efficient CO2‐to‐acetate conversion by spectrally splitting sunlight and coupling high‐temperature SOEC CO2‐to‐CO electrolysis with ambient CO reduction. The integrated design achieves a solar‐to‐acetate efficiency of 15.8%, demonstrating effective energy‐quality matching for solar carbon ...
Shangchun Su +8 more
wiley +1 more source
East European Journal of PhysicsThe present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications.
Merad Laarej +2 more
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Chemistry – A European Journal, EarlyView.A series of NHC‐stabilized phosphanylalanes and phosphanylgallanes bearing alkyl and aryl substituents at phosphorus was synthesized and characterized. Structural and computational studies reveal how substitution influences E13─P bonding and phosphorus donor properties, while reactions with BH3 demonstrate the accessibility of the phosphorus lone pair ...
Tatiana N. Parfeniuk +3 more
wiley +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source