Results 61 to 70 of about 12,610 (226)

TEM EDS analysis of epitaxially-grown self-assembled indium islands

AIP Advances, 2017
Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM ...
Jasmine Sears, Ricky Gibson, Michael Gehl, Sander Zandbergen, Patrick Keiffer, Nima Nader, Joshua Hendrickson, Alexandre Arnoult, Galina Khitrova   +8 more
doaj   +1 more source

Broadband Parametric Amplification in AlGaAs‐on‐Insulator Nanowaveguides

Laser &Photonics Reviews, EarlyView.
Harnessing the exceptional nonlinearity of AlGaAs‐on‐insulator nanowaveguides, four‐wave‐mixing parametric amplification achieves a record net on‐chip gain of 56 dB and a gain bandwidth exceeding 415 nm at telecom wavelengths. These results establish AlGaAsOI as a powerful platform for compact, high‐performance integrated nonlinear optical ...
Yanjing Zhao, Chanju Kim, Yi Zheng, Chaochao Ye, Yueguang Zhou, Kresten Yvind, Minhao Pu   +6 more
wiley   +1 more source

Inhalation developmental toxicology studies: Gallium arsenide in mice and rats [PDF]

, 1990
Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust.
Evanoff, J. J., Dill, J. A., Greenspan, B. J., Mast, T. J., Rommereim, R. L., Stoney, K. H.   +5 more
core   +1 more source

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

Nature Communications, 2017
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huberet al. demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs ...
Daniel Huber, Marcus Reindl, Yongheng Huo, Huiying Huang, Johannes S. Wildmann, Oliver G. Schmidt, Armando Rastelli, Rinaldo Trotta   +7 more
doaj   +1 more source

Near‐Infrared Polarimetric Imaging With Nonlinear Flat‐Optics

Laser &Photonics Reviews, EarlyView.
ABSTRACT A compact and broadband polarimetric imaging platform is presented, based on second‐harmonic generation (SHG) in nonlinear flat‐optics. The system employs periodic all‐dielectric AlGaAs gratings to induce polarization‐dependent SH emission, enabling pixel by pixel direct retrieval of the full Stokes vector from an input intensity distribution ...
Evgenii Menshikov, Marco A. López Sánchez, Paolo Franceschini, Andrea Tognazzi, Domenico de Ceglia, Kristina Frizyuk, Costantino De Angelis   +6 more
wiley   +1 more source

Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

Nature Communications, 2017
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Keilet al. demonstrate that an ensemble of droplet-etched gallium arsenide quantum dots can emit polarization-entangled ...
Robert Keil, Michael Zopf, Yan Chen, Bianca Höfer, Jiaxiang Zhang, Fei Ding, Oliver G. Schmidt   +6 more
doaj   +1 more source

Discovering Shared Design Heritage for Semiconductor‐Based Gamma‐Ray Spectrometers: From CdTe to Metal Halide Perovskites

Laser &Photonics Reviews, EarlyView.
Decades of CdTe and CdZnTe gamma‐ray spectrometer development define core design principles for room‐temperature semiconductor detectors. This Review highlights how metal halide perovskites rapidly assimilate these principles, particularly through defect and compositional engineering strategies that establish favorable spectroscopic conditions for ...
Younghak Kim, Jiwon Seo, Jihwan Boo, Jaehyeon Seo, Chanho Kim, Geehyun Kim, Jung‐Yeol Yeom, Beomjun Park   +7 more
wiley   +1 more source

Photochemical Vapor Deposition of Gallium-Arsenide Utilizing Ultraviolet Radiation.

, 1989
Photochemical means have been utilized to deposit arsenic, gallium and gallium arsenide thin films in an attempt to achieve deposition of gallium arsenide at substrate temperatures lower than those utilized in conventional organometallic chemical vapor ...
Norton, David Paul
core   +1 more source

Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide [PDF]

Известия Саратовского университета. Новая серия: Физика
Background and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that ...
Mikhailov, Aleksandr Ivanovich, Kozhevnikov, Ilya Olegovich, Mitin, Anton V.   +2 more
doaj   +1 more source

Structure‐Controlled Cyclopentadithiophene Derived Non‐Fullerene Acceptors for Efficient Near‐Infrared Organic Photodetectors

Small, EarlyView.
This work demonstrates high‐performance solution‐processed NIR OPDs using DTP‐ and DTTP‐based NFAs (OC and SC), where donor‐core engineering enables tunable absorption and balanced optoelectronic properties; notably, DTP‐based devices achieve broad NIR response, low dark current, and high detectivity, highlighting their potential for advanced NIR ...
Jong‐Woon Ha, Jae‐Hyun Kim, Byoungwook Park, Honghyun Park, Sung Cheol Yoon, Jaebin Jeong, Seunghun Lee, Jaeil Park, Jun‐Gyu Choi, Seo‐Jin Ko, Seung‐Hoon Lee, Sungjun Park   +11 more
wiley   +1 more source