Results 61 to 70 of about 34,697 (226)

Influence of Low‐Level Laser Therapy on Postoperative Pain After Dental Implant Placement: Results From 2 Randomised Controlled Trials

open access: yesOral Surgery, EarlyView.
ABSTRACT Aim The objective of this study was to assess the influence of low‐level laser therapy (LLLT) on postoperative pain after dental implant placement. Material and Methods Data from two randomised controlled trials were used, where patients reported their maximum postoperative pain using a visual analogue scale (VAS) and the frequency of ...
Mateus de Azevedo Kinalski   +4 more
wiley   +1 more source

OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)

open access: yesTechne, 2014
Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj  

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium [PDF]

open access: yes
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide ...
Feucht, D. L., Milnes, A. G.
core   +1 more source

Harnessing Interfacial Field Localization in Hexagonal GaP Mie Resonators

open access: yesNanophotonics, Volume 15, Issue 9, 13 May 2026.
Сharacterization of Mie modes in self‐assembled GaP nanowires grown by MBE in vertical and horizontal configurations. The hexagonal cross‐section suppresses higher‐order modes while preserving dominant low‐order modes with spectral shifts. Simulations and dark‐field spectroscopy confirm the diameter‐dependent tunability.
Aleksandra A. Kutuzova   +8 more
wiley   +1 more source

Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy

open access: yesAIP Advances, 2017
We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae   +6 more
doaj   +1 more source

Surface photovoltage spectroscopy applied to gallium arsenide surfaces [PDF]

open access: yes
The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed.
Bynik, C. E.
core   +1 more source

Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors [PDF]

open access: yes, 2015
Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise.
Adhikari, Rana X   +9 more
core   +2 more sources

Recent Advances in the Synthesis and Processing of Carbon Nanotubes and Carbon Nanocomposites for Energy Storage, Biomedical, and Environmental Applications

open access: yesChemistryOpen, Volume 15, Issue 5, May 2026.
This review summarizes recent advances in the synthesis and processing of carbon nanotubes and carbon nanocomposites, highlighting structure–property relationships and their applications in energy storage, biomedical systems, and environmental technologies, with emphasis on performance optimization and sustainable material design.
Noor‐ul‐Huda Altaf   +9 more
wiley   +1 more source

Controlling the screening process of a nanoscaled space charge region by minority carriers

open access: yesNature Communications, 2016
Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth   +2 more
doaj   +1 more source

Radiation damage [PDF]

open access: yes
The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium ...
Weinberg, I.
core   +1 more source

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