Results 51 to 60 of about 4,377 (195)

Discovering Shared Design Heritage for Semiconductor‐Based Gamma‐Ray Spectrometers: From CdTe to Metal Halide Perovskites

Laser &Photonics Reviews, EarlyView.
Decades of CdTe and CdZnTe gamma‐ray spectrometer development define core design principles for room‐temperature semiconductor detectors. This Review highlights how metal halide perovskites rapidly assimilate these principles, particularly through defect and compositional engineering strategies that establish favorable spectroscopic conditions for ...
Younghak Kim, Jiwon Seo, Jihwan Boo, Jaehyeon Seo, Chanho Kim, Geehyun Kim, Jung‐Yeol Yeom, Beomjun Park   +7 more
wiley   +1 more source

Tunable Terahertz Generation in Dispersion‐Engineered ZnTe Waveguides

Laser &Photonics Reviews, EarlyView.
A dispersion‐engineered Zinc Telluride (ZnTe) slab waveguide platform enables tunable and efficient guided‐wave terahertz (THz) generation through modal phase matching. By tailoring the optical and THz modal dispersion, coherent THz emission is achieved across 0.1–3 THz.
Arun Jana, Cormac McDonnell, Mai Tal, Anastasiya Reveguk, Amit Kohn, Tal Ellenbogen   +5 more
wiley   +1 more source

Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide [PDF]

Известия Саратовского университета. Новая серия: Физика
Background and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that ...
Mikhailov, Aleksandr Ivanovich, Kozhevnikov, Ilya Olegovich, Mitin, Anton V.   +2 more
doaj   +1 more source

From Planar to 3D Nanophotonic Lenses: Advancing Design, Fabrication, and Applications

Laser &Photonics Reviews, EarlyView.
Three‐dimensional nanophotonic lenses are enabled by an integrated workflow that links design parameterization, full‐wave electromagnetic simulation, computational optimization, and freeform fabrication. This Review summarizes how these tools expand optical design freedom beyond a single patterned plane by enriching the local meta‐atom response and ...
Wei Zhu, Lyudmila V. Goncharova, Eric Johlin   +2 more
wiley   +1 more source

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

Progress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda, Pablo Caño, Micaela Rodriguez‐Peña, Miguel Angel Sevillano‐Bendezú, Aurelia Trevisan, Raghavendra Juluri, Aitana Cano, Iván García, Alicia Gonzalo, Enrique Navarro, Jeronimo Buencuerpo, Paul Koenraad, Ana María Sanchez, Yolanda Gonzalez   +13 more
wiley   +1 more source

Looking Inside Micro- and Nano-Mechanical Pillar Resonators: A Picosecond Ultrasonics Approach

Proceedings, 2020
Pillar-shaped Gallium arsenide (GaAs) micromechanical resonators are fabricated, and the feasibility to measure the inside of the pillars in the axial direction with laser-induced GHz ultrasound based on picosecond ultrasonics is tested.
Paul Stritt, Juliane Doster, Thomas Dekorsy, Vitalyi Gusev, Eva Weig, Mike Hettich   +5 more
doaj   +1 more source

Evaluation of a novel laser‐system operating at 1940 nm for weed control and determining the influence of biological and operational factors

Pest Management Science, EarlyView.
The control efficacy of a novel laser pulse system operating at 1940 nm was tested. The new system allows effective control of young weeds with 1.5 J. Targeting the plant stem is 53‐fold more energy‐efficient than the meristem. Species morphology and beam diameter significantly influence weed control efficacy. Abstract BACKGROUND This study evaluates a
Ran Nisim Lati, Neria Suliman, Rotem Nahear, Evgeny Smirnov, Avital Bechar, Gilad Marcus, Salman Noach   +6 more
wiley   +1 more source

Comparison of different X‐ray‐based scanning electron microscopy methods to detect sub‐nanometre ultra‐thin InAs layers deposited on top of GaAs

Journal of Microscopy, EarlyView.
Abstract We compare three different methods of X‐ray analysis in a scanning electron microscope (SEM): energy‐dispersive X‐ray spectroscopy (EDX), wavelength‐dispersive X‐ray spectroscopy (WDX) and micro X‐ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on ...
Thomas Walther, Stuart Creasey‐Gray, Stephan Boehm, Heath Young, Yang Yang   +4 more
wiley   +1 more source

OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)

Techne, 2014
Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj  

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source