Results 51 to 60 of about 67,140 (213)
Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering [PDF]
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Yu L +10 more
europepmc +2 more sources
Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong +4 more
wiley +1 more source
TEM EDS analysis of epitaxially-grown self-assembled indium islands
Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM ...
Jasmine Sears +8 more
doaj +1 more source
Monolithically integrated vanadium oxide photodetection breaking spectral limitations
We demonstrate monolithically integrated ultra‐broadband vanadium oxide photodetection from the visible to the mid‐infrared spectrum by leveraging the optical–thermal–resistance effect. With a micrometer‐scale footprint, the integrated photodetector delivers a fast response time of ∼26.24 μs.
Taoran Yao +8 more
wiley +1 more source
Production of fiber-optic materials and semiconductor compounds in Ukraine
A comparative analysis of the current state of production technology and the consumption market of quartz glass-based fiber-optic materials (silicon tetrachloride, germanium tetrachloride, metallurgical-grade silicon) and semiconductor compounds (gallium
Yu. V. Trubitsyn, D. I. Levynzon
doaj
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huberet al. demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs ...
Daniel Huber +7 more
doaj +1 more source
Coulometric titration of gallium in gallium arsenide.
電量滴定法によりヒ化ガリウム中のガリウムの定量を行った.分析方法としては,ガリウムに対して過剰のEDTAを加えてキレート生成させて,過剰分を電解発生させた銅(II)イオンで逆滴定するという手法を採った.そこでEDTAの純度分析を行ったところ,銅(II)イオンによる滴定条件において基礎液の濃度とpH調節が重要であった.又滴定終点は,ポテンショスタットで電位規制した作用電極上での銅(II)イオンの還元電流を利用して決定した.EDTAの純度分析の結果は99.749%となり,この値に基づいて高純度ガリウムの定量,更にヒ化ガリウム中のガリウムの定量を行った.ヒ化ガリウムを試料とした場合には共存するヒ素(V)の影響が大きいことから,ヒ素(III)への還元操作を加えた ...
NAKAYAMA, Shigeyoshi +2 more
openaire +2 more sources
Assessing plant water status: Part 2 – Non‐destructive and remote sensing approaches
Abstract Precise, real time and non‐destructive assessment of plant water status is important for advancing plant physiological understanding, optimizing water usage, improving crop resilience and supporting precision agriculture in the face of increasingly variable climatic conditions.
Naila Farooq +7 more
wiley +1 more source
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Keilet al. demonstrate that an ensemble of droplet-etched gallium arsenide quantum dots can emit polarization-entangled ...
Robert Keil +6 more
doaj +1 more source
Development and modeling of a solid‐state microdosimeter for proton therapy applications [PDF]
Precision Radiation Oncology, EarlyView.
Mercado D +7 more
europepmc +2 more sources

