Results 51 to 60 of about 34,697 (226)
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions
Nature Communications, 2017 Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Keilet al. demonstrate that an ensemble of droplet-etched gallium arsenide quantum dots can emit polarization-entangled ...
Robert Keil +6 more
doaj +1 more source
Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide [PDF]
Известия Саратовского университета. Новая серия: ФизикаBackground and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that ...
Mikhailov, Aleksandr Ivanovich +2 more
doaj +1 more source
Simple method of making photovoltaic junctions Patent [PDF]
, 1967 Gallium arsenide solar cell preparation by surface deposition of cuprous iodide on thin n-type polycrystalline layers and heating in iodine ...
Ellis, S. G.
core +1 more source
Weather, EarlyView.Lowest‐layer cloud base height (CBH) measurements obtained between July 2018 and December 2019 from four ceilometers at the Korea Standard Meteorological Observatory were compared to determine how ceilometer installation angle differentially affects CBH measurements.
Jaewon Kim +3 more
wiley +1 more source
Looking Inside Micro- and Nano-Mechanical Pillar Resonators: A Picosecond Ultrasonics Approach
Proceedings, 2020 Pillar-shaped Gallium arsenide (GaAs) micromechanical resonators are fabricated, and the feasibility to measure the inside of the pillars in the axial direction with laser-induced GHz ultrasound based on picosecond ultrasonics is tested.
Paul Stritt +5 more
doaj +1 more source
GaAs solar detector using manganese as a doping agent Patent [PDF]
, 1966 Describing method for vapor deposition of gallium arsenide films to manganese substrates to provide semiconductor devices with low resistance ...
Pasierb, E. F.
core +1 more source
Journal of Microscopy, EarlyView.Abstract We compare three different methods of X‐ray analysis in a scanning electron microscope (SEM): energy‐dispersive X‐ray spectroscopy (EDX), wavelength‐dispersive X‐ray spectroscopy (WDX) and micro X‐ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on ...
Thomas Walther +4 more
wiley +1 more source
Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Method of fabricating germanium and gallium arsenide devices [PDF]
A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or ...
Jhabvala, Murzban
core +1 more source
Laser Acupuncture on the Management of Xerostomia in Sjögren's Disease: A Randomized Clinical Trial
Oral Diseases, EarlyView.ABSTRACT Objectives This study evaluated the efficacy of photobiomodulation (PBM) at acupuncture points for managing xerostomia in patients with Sjögren's Disease. Material and Methods In this randomized, double‐blind clinical trial, 50 patients were assigned to PBM group (n = 22) or sham‐PBM group (n = 28).
Matheus Ferreira Linares +5 more
wiley +1 more source