Results 31 to 40 of about 34,697 (226)

Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

Advanced Materials, EarlyView.
Solution‐processed organic photodetectors (OPDs) based on two novel low band gap non‐fullerene acceptors BZIC‐2F and BZIC‐2Cl, when blended with common polymer donor P3HT, extend detection range beyond 1200 nm with superior performance, rivaling costly inorganic sensors and past literature.
Zhuoran Qiao, Sandeep Sharma, Yakun He, Marie Houot, Kun‐Han Lin, Davide Nodari, Filip Aniés, Matilde Brunetta, Patipan Sukpoonprom, Eunyoung Hong, Edoardo Angela, Zian Wang, Pichaya Pattanasattayavong, Martyn A. McLachlan, Artem Bakulin, Denis Andrienko, Frédéric Laquai, Martin Heeney, Nicola Gasparini   +18 more
wiley   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces

Advanced Science, EarlyView.
We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao, Yuxin Xie, Jonathan Diederich, Christian Höhn, Klaus Schwarzburg, Fengtao Fan, Can Li, Roel van de Krol, Dennis Friedrich   +8 more
wiley   +1 more source

THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj  

Investigation of Short Channel Effects in Al_0.30Ga_0.60As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications

Journal of Low Power Electronics and Applications
In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, Arvind Kumar Singh   +4 more
doaj   +1 more source

Material Dispersion in Intrinsic GaAs for the Far-Infrared Range

Active and Passive Electronic Components, 1998
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj   +1 more source

Electronic structure of rare earth arsenide/gallium arsenide superlattices [PDF]

Solid State Communications, 1996
We present linear-muffin-tin-orbital calculations of the energy band structure and of the density of states of semimetal-conductor superlattices made of rare earth arsenide (ErAs and YbAs) and GaAs. The effect of size quantization and the possibility of a semimetal-semiconductor transition is studied by varying the number of rare earth arsenide ...
Said M., Bertoni, C. M., Fasolino A., OSSICINI, Stefano   +3 more
openaire   +3 more sources

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

Crystals, 2022
Dental caries is a progressive disease with varying phases of demineralization and remineralization, and the scope of reversing the carious lesion is increased if it is diagnosed before there is surface cavitation.
Sonali Sharma, Mithra N. Hegde, Sindhu Ramesh   +2 more
doaj   +1 more source