Results 31 to 40 of about 4,377 (195)

Engineering Ultrastable Intrinsic Radicals: Graphene Quantum Dots With NIR‐II Emission for Dynamic Deep‐Tissue Bioimaging

open access: yesAdvanced Science, EarlyView.
Stable radicals are attractive for photonic and quantum information technologies but are often limited by instability. We stabilize intrinsic radicals in graphene quantum dots via 2D polymerization of perylene derivatives, where bilayer defect confinement suppresses quenching (100–500 K).
Qin Xu   +9 more
wiley   +1 more source

Neuromorphic Devices and Computing for Sensing, Memory, and Control

open access: yesAdvanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu   +2 more
wiley   +1 more source

THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj  

Investigation of Short Channel Effects in Al0.30Ga0.60As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications

open access: yesJournal of Low Power Electronics and Applications
In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava   +4 more
doaj   +1 more source

Material Dispersion in Intrinsic GaAs for the Far-Infrared Range

open access: yesActive and Passive Electronic Components, 1998
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj   +1 more source

Machine Learning‐Assisted Design and Performance Prediction of a Compact Dual‐Band Polarization‐Insensitive THz Metamaterial Absorber for Skin‐Cancer‐Related Refractive‐Index Sensing

open access: yesAdvanced Electronic Materials, EarlyView.
A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun   +5 more
wiley   +1 more source

Structure‐Function Tailoring of Plasmonic Nanomaterials for Thin‐Film Photovoltaics

open access: yesCarbon Energy, EarlyView.
This review discusses the mechanisms and recent advancements of plasmonics in achieving effective light management to enhance the performance of thin‐film solar cells. It highlights applications in high‐performance perovskite solar cells and future‐oriented tandem solar cells.
Sen Jiang   +14 more
wiley   +1 more source

Tandem Electrolysers for High‐Efficiency CO2‐to‐Acetate Conversion Driven by Full‐Spectrum Solar Energy

open access: yesCarbon Energy, EarlyView.
A full‐spectrum solar‐driven tandem electrolysis system enables efficient CO2‐to‐acetate conversion by spectrally splitting sunlight and coupling high‐temperature SOEC CO2‐to‐CO electrolysis with ambient CO reduction. The integrated design achieves a solar‐to‐acetate efficiency of 15.8%, demonstrating effective energy‐quality matching for solar carbon ...
Shangchun Su   +8 more
wiley   +1 more source

Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics

open access: yesEast European Journal of Physics
The present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications.
Merad Laarej   +2 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam   +3 more
wiley   +1 more source

Home - About - Disclaimer - Privacy