Results 31 to 40 of about 12,610 (226)
Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented.
Fetisov Leonid +5 more
doaj +1 more source
GaAs on Si substrate with dislocation filter layers for wafer‐scale integration
GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morphology and
HoSung Kim +7 more
doaj +1 more source
Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators
The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics.
El-Hageen Hazem M. +2 more
doaj +1 more source
Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC Method
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations.
Xia Tang +4 more
doaj +1 more source
In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based on GaAs, and heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors based mainly on the Gallium Arsenide/Aluminum Gallium ...
Rinzan, Mohamed Buhary
core +1 more source
Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X. +10 more
doaj +1 more source
Spacer‐Less Substrate‐Integrated Metasurface for Near‐Unity Terahertz Absorption
ABSTRACT Although conventional metal‐insulator‐metal (MIM) terahertz (THz) absorbers can provide near‐unity absorption, their multilayer stacks inevitably introduce additional thickness, mass, and residual stress, which limit their compatibility with THz thermal sensing platforms.
Zihao Zhao +6 more
wiley +1 more source
Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao +8 more
doaj +1 more source
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta +6 more
doaj +1 more source
Mono‐ and bilayer MoS2 photodetectors enable wavelength‐selective AC photoresponse and optically driven capacitance modulation under visible illumination. Green excitation produces the strongest cumulative capacitive response, consistent with trap‐mediated charge accumulation at mono/bilayer and metal–MoS2 interfaces.
Pegah Zandi +5 more
wiley +1 more source

