Results 31 to 40 of about 67,140 (213)
Neuromorphic Devices and Computing for Sensing, Memory, and Control
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu +2 more
wiley +1 more source
Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao +8 more
doaj +1 more source
Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X. +10 more
doaj +1 more source
In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based on GaAs, and heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors based mainly on the Gallium Arsenide/Aluminum Gallium ...
Rinzan, Mohamed Buhary
core +1 more source
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta +6 more
doaj +1 more source
Researchers developed and applied a generative artificial intelligence (AI) model to optimize epsilon‐near‐zero thin film stacks for ultra‐broadband perfect absorption of light. The fabricated AI‐designed absorber, with a total thickness of only 160 nm, experimentally demonstrated an absorption bandwidth exceeding 1000 nm while maintaining greater than
David Dang +10 more
wiley +1 more source
Valence band engineering of GaAsBi for low noise avalanche photodiodes
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu +8 more
doaj +1 more source
Molecular Rectification: Mechanisms, Modulation Strategies, and Device Realization
This review focuses on molecular rectification, from its fundamental mechanisms and modulation strategies to device realization. It summarizes the theoretical framework, modulation strategies, fabrication techniques, characterization methods, and modeling and simulation of molecular rectifiers, while discussing challenges and future directions for ...
Junnan Guo +8 more
wiley +1 more source
Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium [PDF]
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide ...
Feucht, D. L., Milnes, A. G.
core
Free Charge Generation in Organic Photoconversion Devices–the Impact of Electrostatic Potentials
Free charge generation in organic photovoltaic and photodetector devices typically requires an external driving force to separate bound excitons formed upon photoexcitation. This review details how electrostatic potentials, arising from molecular charge distributions in organic semiconductors, can impact interfacial energetic landscapes and promote ...
Emily J. Yang +3 more
wiley +1 more source

