Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Фізика і хімія твердого тіла, 2016 Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge
S. P. Novosyadlyi, V. S. Huzik
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Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Scientific Reports, 2022 A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements.
N. J. Bailey +5 more
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Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts
IEEE Access, 2021 This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium ...
Ahid S. Hajo +4 more
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Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Tecnología en Marcha, 2021 Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman +1 more
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Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters
International Journal of Antennas and Propagation, 2015 We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material.
Jens Klier +10 more
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GaAs on Si substrate with dislocation filter layers for wafer‐scale integration
ETRI Journal, 2021 GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer‐scale characteristics. The surface morphology and
HoSung Kim +7 more
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Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
EPJ Web of Conferences, 2018 The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented.
Fetisov Leonid +5 more
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Non-equilibrium processes in a gas-discharge cell with plasma contacts [PDF]
E3S Web of ConferencesNon-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally.
Khaydarov Zokirjon +5 more
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Subcycle Wannier-Stark Localization by Mid-Infrared Bias in Gallium Arsenide [PDF]
EPJ Web of Conferences, 2019 The fundamental interband absorption in gallium arsenide shows a strong blue shift when biased by mid-infrared transients exceeding 10 MV/cm. This subcycle feature is induced by the localization of electronic wavefunctions from 3D to 2D.
Bühler Johannes +11 more
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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]
Seventh Topical Meeting on Integrated and Guided-Wave Optics, 1984 The goal of integrated optoelectronics is to monolithically integrate optoelectronic components with purely electronic components. In this paper we describe the demonstration of the monolithic integration of a laser, a transistor and a photodiode.
Bar-Chaim, N. +3 more
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