Results 71 to 80 of about 67,140 (213)
Small, EarlyView.Hybrid 1D–2D architectures redefine material design strategies for TFLIBs by decoupling competing performance parameters. This approach accelerates the transition of TFLIBs from proof of concept to practical wearable technologies. ABSTRACT Transparent and flexible lithium‐ion batteries (TFLIBs), enabled by advanced nanomaterials and flexible ...
Raviraj Madesan, Anand Sreekantan Thampy
wiley +1 more source
Design and fabrication of a gallium arsenide composite operational amplifier [PDF]
, 1995 Silicon (Si) processes remain the dominant technology in integrated circuit (IC) design, but gallium arsenide (GaAs) is gaining ground. Gallium arsenide's electron mobility is five times greater than Si, so GaGs circuits are faster and have a greater ...
Carson, David B.
core +1 more source
OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)
Techne, 2014 Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj
Journal of Microscopy, EarlyView.Abstract We compare three different methods of X‐ray analysis in a scanning electron microscope (SEM): energy‐dispersive X‐ray spectroscopy (EDX), wavelength‐dispersive X‐ray spectroscopy (WDX) and micro X‐ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on ...
Thomas Walther +4 more
wiley +1 more source
AIP Advances, 2017 We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae +6 more
doaj +1 more source
Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
PPL 1.2mu gallium arsenide cell set [PDF]
, 1993 journal articleThe purpose of this note is to describe the 1.2/i gallium arsenide PPL cell set - not only what is included, but design decisions made along the way. The first section is an overview of the Umitations imposed by the use of gallium arsenide
Michell, Nick
core
Photovoltaic Effect in a III‐IV‐V Compound Semiconductor
Progress in Photovoltaics: Research and Applications, Volume 34, Issue 12, Page 1552-1563, December 2026.A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda +13 more
wiley +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source
Surface photovoltage spectroscopy applied to gallium arsenide surfaces [PDF]
, 1975 The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed.
Bynik, C. E.
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