Results 71 to 80 of about 12,610 (226)
Looking Inside Micro- and Nano-Mechanical Pillar Resonators: A Picosecond Ultrasonics Approach
Proceedings, 2020 Pillar-shaped Gallium arsenide (GaAs) micromechanical resonators are fabricated, and the feasibility to measure the inside of the pillars in the axial direction with laser-induced GHz ultrasound based on picosecond ultrasonics is tested.
Paul Stritt +5 more
doaj +1 more source
Gepta‐EX: a multi‐channel germanium detector for X‐ray absorption fine structure
Journal of Synchrotron Radiation, EarlyView.Gepta‐EX is a compact seven‐channel high‐purity germanium detector designed to deliver high‐resolution fluorescence X‐ray absorption fine‐structure measurements at photon energies where silicon detectors become effectively transparent. It provides excellent energy resolution across a broad energy range, avoids silicon escape‐peak artifacts, and offers ...
Abdul K. Rumaiz +6 more
wiley +1 more source
, 2009 The toxicology of gallium arsenide is well established; it is classified by the state of California as a known carcinogen. Consequently, environmental aspects of GaAs wafer manufacture are coming under greater scrutiny, with the cost of waste disposal ...
Keenan, H.E., Torrance, K.
core
Journal of Microscopy, EarlyView.Abstract We compare three different methods of X‐ray analysis in a scanning electron microscope (SEM): energy‐dispersive X‐ray spectroscopy (EDX), wavelength‐dispersive X‐ray spectroscopy (WDX) and micro X‐ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on ...
Thomas Walther +4 more
wiley +1 more source
Designing Asynchronous Circuits in Gallium Arsenide
, 1993 this document were used to build a number of circuits. Among them, several memories and register files, and a simplified version of the Caltech asynchronous processor.
Gallium Arsenide, José A. Tierno
core
On Electronic Structure Engineering and Thermoelectric Performance
, 2011 In this paper, we address the question of how to engineer the electronic structure to enhance the performance of a thermoelectric material. We examine several different materials and show that all of them, even those for which giant Seebeck coefficients ...
Lundstrom, Mark +4 more
core +1 more source
OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)
Techne, 2014 Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj
Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Laser Acupuncture on the Management of Xerostomia in Sjögren's Disease: A Randomized Clinical Trial
Oral Diseases, EarlyView.ABSTRACT Objectives This study evaluated the efficacy of photobiomodulation (PBM) at acupuncture points for managing xerostomia in patients with Sjögren's Disease. Material and Methods In this randomized, double‐blind clinical trial, 50 patients were assigned to PBM group (n = 22) or sham‐PBM group (n = 28).
Matheus Ferreira Linares +5 more
wiley +1 more source
Photoluminescence studies in aluminum-doped gallium-arsenide
, 1979 The photoluminescence of several impure Gallium-Arsenide samples is measured at low temperature. The effects of annealing on Gallium-Arsenide substrates is examined to determine if Group III elements such as Aluminum will occupy Gallium or Arsenic ...
Alfrey, Anthony James
core +1 more source