Results 71 to 80 of about 34,697 (226)

Total immersion crystal growth [PDF]

, 1987
Crystals of wide band gap materials are produced by positioning a holder receiving a seed crystal at the interface between a body of molten wide band gap material and an overlying layer of temperature-controlled, encapsulating liquid.
Morrison, Andrew D.
core   +1 more source

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

IEEE Journal of the Electron Devices Society, 2018
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro, Santiago Navarro, Carlos Marquez, Luca Donetti, Carlos Sampedro, Siegfried Karg, H. Riel, Francisco Gamiz   +7 more
doaj   +1 more source

Materials and methods for large-area solar cells Final report, 17 Dec. 1964 - 16 Dec. 1965 [PDF]

Growth and evaluation of gallium arsenide-indium arsenide-aluminum foil structures in construction of thin film large area solar cells for ...
Addiss, R. R., Jr., Ellis, S. G., Rappaport, P., Vohl, P.   +3 more
core   +1 more source

Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere Patent [PDF]

, 1968
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium ...
Ellis, S. G.
core   +1 more source

Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics

Nature Communications, 2018
The natural quantization axis in quantum dots, which is usually parallel to the growth direction, is not ideal for planar photonic circuits. Here Yuan et al.
Xueyong Yuan, Fritz Weyhausen-Brinkmann, Javier Martín-Sánchez, Giovanni Piredda, Vlastimil Křápek, Yongheng Huo, Huiying Huang, Christian Schimpf, Oliver G. Schmidt, Johannes Edlinger, Gabriel Bester, Rinaldo Trotta, Armando Rastelli   +12 more
doaj   +1 more source

Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit

Фізика і хімія твердого тіла, 2018
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk, S. P. Novosiadlyi, V. І. Mandzyuk, І. Z. Huk   +3 more
doaj   +1 more source

Study of electron-phonon interactions in III-V semiconductors Quarterly progress report no. 2, Apr. 15 - Jul. 15, 1965 [PDF]

Electron-phonon attenuation measured in indium arsenide and gallium arsenide single crystals at 10 Kmc and 10 mc as function of ...
Huang, C. Y., Martin, J.
core   +1 more source

High-performance Schottky diodes endure high temperatures [PDF]

, 1975
Fabrication process and aluminum/GaAs (gallium arsenide) coupling are used to produce Schottky diodes that have high cutoff frequencies and can withstand operating temperatures in excess of 500 ...
Dickens, L. E., Kim, H. B., Trageser, F. G.   +2 more
core   +1 more source

Development and modeling of a solid‐state microdosimeter for proton therapy applications

Precision Radiation Oncology, EarlyView.
Dante Guido Mercado, Lucía Cervantes Schamun, Juan Ignacio Drovandi, Norberto Boggio, Nadia Kondratiuk, María José Deiana, Mónica Martínez Bogado, Guido Matías Berlín   +7 more
wiley   +1 more source

Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation. [PDF]

Micromachines (Basel), 2023
Zhao Y, Yang H, Khayrudinov V, Lipsanen H, Su X, Su X, Qi M, Lu B, Song N.   +8 more
europepmc   +1 more source