Results 81 to 90 of about 34,697 (226)

Solid-state laser transmitter is amplitude modulated [PDF]

open access: yes, 1965
Amplitude modulated laser transmitter affords radio frequencies unlimited bandwidth.
Bilderback, R.
core   +1 more source

Millimeter-wave diode-grid phase shifters [PDF]

open access: yes, 1988
Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe.
Chen, Howard Z.   +5 more
core   +1 more source

Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov   +4 more
doaj   +1 more source

Evaporator for thermal deposition of materials in vacuum

open access: yesТехнологія та конструювання в електронній апаратурі, 2008
The design of an evaporator intended for material deposition in vacuum-coating systems is considered, which has been successfully employed in the technological process of fabricating gallium arsenide transistors, diodes, and monolithic circuits.
V. I. Bosyi   +2 more
doaj  

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

open access: yesNano Select
The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj   +1 more source

A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials [PDF]

open access: yes
Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments.
Hurley, John S.
core   +1 more source

Analysis of GaAs and Si solar cell arrays for earth orbital and orbit transfer missions [PDF]

open access: yes
Silicon and gallium arsenide arrays were studied and compared for low earth orbit (LE), geosynchronous orbit (GEO), and LEO to GEO electric propulsion orbit transfer missions.
Jeffries, K. D.
core   +1 more source

“The Thermal Wave” in Technology of Crystal Growth from the Melt [PDF]

open access: yesЖурнал нано- та електронної фізики, 2013
It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method.
V.G. Kosushkin   +4 more
doaj  

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