Results 81 to 90 of about 4,377 (195)

Strain Imaging of GaAs by Stimulated Raman Scattering Microscopy

Journal of Raman Spectroscopy, Volume 57, Issue 8, Page 1387-1391, August 2026.
Telecom‐wavelength stimulated Raman scattering (SRS) microscopy is developed for high‐throughput, nondestructive characterization of gallium arsenide (GaAs). By overcoming optical absorption limits of conventional Raman systems, this technique enables precise visualization of LO phonon frequency variations (< 0.2‐cm −1 precision).
Yuki Sano, Yasuyuki Ozeki
wiley   +1 more source

Quantification of Aluminum Gallium Arsenide (AlGaAs) Wafer Plasma Using Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS). [PDF]

Molecules, 2022
Alrebdi TA, Fayyaz A, Asghar H, Zaman A, Asghar M, Alkallas FH, Hussain A, Iqbal J, Khan W.   +8 more
europepmc   +1 more source

Octave‐Spanning, Deterministic Single Soliton Generation in 4H‐Silicon Carbide‐On‐Insulator Microring Resonators

Laser &Photonics Reviews, Volume 20, Issue 15, 7 August 2026.
The miniaturization of metrology and precision spectroscopy systems requires robust, turn‐key microcombs with broad bandwidth, low threshold, and high efficiency. Here, high‐Q, dispersion‐engineered microresonators in a high‐confinement nonlinear SiC platform, combined with waveguide‐enabled thermal management and laser cooling, enable deterministic ...
Yi Zheng, Liping Zhou, Chengli Wang, Yanjing Zhao, Ailun Yi, Kresten Yvind, Xin Ou, Minhao Pu   +7 more
wiley   +1 more source

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Nano Select
The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj   +1 more source

Broadband Parametric Amplification in AlGaAs‐on‐Insulator Nanowaveguides

Laser &Photonics Reviews, Volume 20, Issue 16, 21 August 2026.
Harnessing the exceptional nonlinearity of AlGaAs‐on‐insulator nanowaveguides, four‐wave‐mixing parametric amplification achieves a record net on‐chip gain of 56 dB and a gain bandwidth exceeding 415 nm at telecom wavelengths. These results establish AlGaAsOI as a powerful platform for compact, high‐performance integrated nonlinear optical ...
Yanjing Zhao, Chanju Kim, Yi Zheng, Chaochao Ye, Yueguang Zhou, Kresten Yvind, Minhao Pu   +6 more
wiley   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Structure‐Controlled Cyclopentadithiophene Derived Non‐Fullerene Acceptors for Efficient Near‐Infrared Organic Photodetectors

Small, Volume 22, Issue 43, 3 August 2026.
This work demonstrates high‐performance solution‐processed NIR OPDs using DTP‐ and DTTP‐based NFAs (OC and SC), where donor‐core engineering enables tunable absorption and balanced optoelectronic properties; notably, DTP‐based devices achieve broad NIR response, low dark current, and high detectivity, highlighting their potential for advanced NIR ...
Jong‐Woon Ha, Jae‐Hyun Kim, Byoungwook Park, Honghyun Park, Sung Cheol Yoon, Jaebin Jeong, Seunghun Lee, Jaeil Park, Jun‐Gyu Choi, Seo‐Jin Ko, Seung‐Hoon Lee, Sungjun Park   +11 more
wiley   +1 more source

Superionic Germanium Substituted Lithium Thioarsante Li6+xGexAs1‐xS5Br Argyrodites With High Air Stability

Small, Volume 22, Issue 45, 13 August 2026.
Ge substitution in Li6+xGexAs1‐xS5Br expands the lattice, redistributes Li+, and enhances intercage diffusion, increasing ionic conductivity 6‐fold to 12.7 mS/cm at x = 0.5. Li6.5As0.5Ge0.5S5Br also shows improved air stability, linking the lithium substructure to fast, stable ion transport in thioarsenate argyrodites. ABSTRACT Lithium argyrodite solid
Ajay Gautam, Ruihua Zhou, Anastasia K. Lavrinenko, Hanan Al‐Kutubi, Swapna Ganapathy, Xin Zhang, Alexandros Vasileiadis, Shuo Wang, Marnix Wagemaker   +8 more
wiley   +1 more source

Mixer-detector and multiplier diodes for microwave receiver mixers

Технологія та конструювання в електронній апаратурі, 2003
Original designs of gallium arsenide Schottky barrier diodes are described, which are successfully used in frequency converters of the centimeter and millimeter wavelength ranges.
S. V. Bobzhenko, V. I. Mai, V. A. Novitsky, V. V. Tkachenko, А. V. Tkachenko, M. I. Ugrin   +5 more
doaj  

Illuminating the Future of Catecholamine Detection

Journal of Neurochemistry, Volume 170, Issue 8, August 2026.
Catecholamines such as dopamine and norepinephrine are key signaling molecules in our body. We discuss how fluorescent sensors (carbon nanotube based and genetically encoded) for these molecules in combination with novel imaging methods and kinetic data analysis enable new biological experiments.
Julia Ackermann, Andreas Reiner, Sebastian Kruss   +2 more
wiley   +1 more source