Results 81 to 90 of about 12,610 (226)
AIP Advances, 2017 We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae +6 more
doaj +1 more source
Oral Surgery, EarlyView.ABSTRACT Aim The objective of this study was to assess the influence of low‐level laser therapy (LLLT) on postoperative pain after dental implant placement. Material and Methods Data from two randomised controlled trials were used, where patients reported their maximum postoperative pain using a visual analogue scale (VAS) and the frequency of ...
Mateus de Azevedo Kinalski +4 more
wiley +1 more source
Deterministic Detection of Single Ion Implantation
Advanced Engineering Materials, Volume 28, Issue 11, 3 June 2026.Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source
Controlling the screening process of a nanoscaled space charge region by minority carriers
Nature Communications, 2016 Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth +2 more
doaj +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source
Nature Communications, 2018 The natural quantization axis in quantum dots, which is usually parallel to the growth direction, is not ideal for planar photonic circuits. Here Yuan et al.
Xueyong Yuan +12 more
doaj +1 more source
Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation. [PDF]
Micromachines (Basel), 2023 Zhao Y +8 more
europepmc +1 more source
Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]
Технологія та конструювання в електронній апаратурі, 2009 The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov +4 more
doaj +1 more source
Nano SelectThe main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj +1 more source
Фізика і хімія твердого тіла, 2018 The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk +3 more
doaj +1 more source