Results 101 to 110 of about 34,697 (226)
Efficient millimeter wave 1140 GHz/ diode for harmonic power generation [PDF]
, 1967 Epitaxial gallium arsenide diode junction formed in a crossed waveguide structure operates as a variable reactance harmonic generator.
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Design and fabrication of a laser modulator Final report, Jul. 27 - Oct. 27, 1965 [PDF]
Laser modulator using gallium arsenide and gallium phosphide electro-optic ...
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Photon-coupled isolation switch Quarterly report, 1 Jul. - 30 Sep. 1967 [PDF]
Development of gallium arsenide laser diode with silicon phototransistor for optical isolation ...
Bonin, E. L., Harp, E. E.
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Nature Communications, 2019 Here, the authors report parametric down-conversion of X-rays into long wavelength radiation in gallium arsenide and lithium niobate crystals, with efficiencies about 4 orders of magnitude stronger than the efficiencies measured in any material studied ...
S. Sofer +8 more
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Development of a microelectronic module Final report [PDF]
Feasibility of operating gallium arsenide devices in high temperature microelectronic ...
Doerbeck, F. +3 more
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Thermocompression bonding produces efficient surface-barrier diode [PDF]
, 1965 Thermocompression bonding of a gold wire to a gallium-arsenide wafer produces a quality surface barrier diode with fast recovery times.
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MODELLING OF AVERAGE DRIFT SPEED OF ELECTRONS IN ONE-DIMENSIONAL STRUCTURE FROM GALLIUM ARSENIDE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of average drift speed of electrons are given in one-dimensional structure from gallium arsenide. Recommendations about a choice of sizes of a temporary step and length of a spatial cell which define procedure of numerical modeling are ...
V. N. Mishchenka
doaj
Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals [PDF]
Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface.
Buckley, D. H., Mishina, H.
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Improved method of fabricating planar gallium arsenide diodes [PDF]
, 1969 Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N ...
Roy, M. M., Yeh, T. H.
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Cuprous selenide and sulfide form improved photovoltaic barriers [PDF]
, 1966 Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable.
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