Results 101 to 110 of about 12,610 (226)
Characterization of defects in gallium arsenide
, 1990 It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but ...
Mohapatra, YN, Kumar, Vikram
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Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel [PDF]
مجله مدل سازی در مهندسیIn this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared.
Shoaib Babaei tooski +2 more
doaj +1 more source
Ion implantation damage in gallium arsenide crystals.
, 1975 Crystal damage produced by ion implantation in (110) cut gallium arsenide single crystals has been investigated using X-ray diffraction, reflection high energy electron diffraction (RHEED) and electron microscopy.
Tunkasiri, Tawee.
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Quantification of Aluminum Gallium Arsenide (AlGaAs) Wafer Plasma Using Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS). [PDF]
Molecules, 2022 Alrebdi TA +8 more
europepmc +1 more source
Diffusion of sulfur in gallium phosphide and gallium arsenide
, 1969 Radiotracer technique for sulfur diffusion in gallium phosphide and arsenide as function of temperature and ...
Young, A. B. Y.
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Spin Dynamics of n-doped Gallium Arsenide [PDF]
, 2014 The emerging technology of spintronics promises to revolutionise computing by allowing considerably more energy efficient computing than is currently possible.
Hodgson, Matthew David
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Surface photovoltage spectroscopy applied to gallium arsenide surfaces
, 1975 The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed.
Bynik, C. E.
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GOLD-GERMANIUM CONTACTS ON GALLIUM ARSENIDE
, 1989 The gold-germanium/gallium arsenide interface was investigated using atom-probe analysis and transmission electron microscopy. When thin films were deposited on an oxidized surface small islands formed.
A. KVIST, H.-O. ANDRÉN, Q.H. HU
core +1 more source
Development of gallium arsenide solar cells
, 1973 The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface ...
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Neutron Transmutation Doping of Gallium Arsenide
, 1978 Program year: 1977-1978Digitized from print original stored in HDRNeutron transmutation doped gallium arsenide samples were produced at the Nuclear Science Center at Texas A&M University.
Juneau, Jon
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