Results 101 to 110 of about 67,140 (213)
Quantification of Aluminum Gallium Arsenide (AlGaAs) Wafer Plasma Using Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS). [PDF]
Molecules, 2022 Alrebdi TA +8 more
europepmc +1 more source
Photoluminescence studies in aluminum-doped gallium-arsenide
, 1979 The photoluminescence of several impure Gallium-Arsenide samples is measured at low temperature. The effects of annealing on Gallium-Arsenide substrates is examined to determine if Group III elements such as Aluminum will occupy Gallium or Arsenic ...
Alfrey, Anthony James
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Mixer-detector and multiplier diodes for microwave receiver mixers
Технологія та конструювання в електронній апаратурі, 2003 Original designs of gallium arsenide Schottky barrier diodes are described, which are successfully used in frequency converters of the centimeter and millimeter wavelength ranges.
S. V. Bobzhenko +5 more
doaj
Gettering of impurities from gallium arsenide
, 1969 Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three.
Ravindran, K. +2 more
core +1 more source
, 1984 RAMAN SPECTROSCOPIC STUDIES OF ION-IMPLANTED GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE (OPTICAL, III-V, SEMICONDUCTOR)
CHALLASREE S. RAMA. RAO (7983527)
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MODELLING OF AVERAGE DRIFT SPEED OF ELECTRONS IN ONE-DIMENSIONAL STRUCTURE FROM GALLIUM ARSENIDE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of average drift speed of electrons are given in one-dimensional structure from gallium arsenide. Recommendations about a choice of sizes of a temporary step and length of a spatial cell which define procedure of numerical modeling are ...
V. N. Mishchenka
doaj
The Role of Negative Ions in LEDs
Известия высших учебных заведений и энергетических объединенний СНГ: ЭнергетикаLEDs are based on a semiconductor crystal with a surface in Miller indices (111), formed by diatomic molecules of gallium arsenide or indium phosphide in bulk clusters.
L. I. Gretchikhin
doaj +1 more source
The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material. [PDF]
Micromachines (Basel), 2020 Meng J +5 more
europepmc +1 more source
Gallium arsenide waveguides as a platform for direct mid-infrared vibrational spectroscopy. [PDF]
Anal Bioanal Chem, 2020 Haas J +4 more
europepmc +1 more source
The study of laser pulse controlled terahertz pulse generation in gallium arsenide. [PDF]
, 2017 The Study of Laser Pulse Controlled Terahertz Pulse Generation in Gallium ...
Bautronis, Žydrūnas,
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