Results 111 to 120 of about 67,140 (213)

Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide

, 2010
The spin Hall effect allows the direct detection of spins in semiconductors. In this study, electron spins in n-doped gallium arsenide are detected and the effects of n-type doping in gallium arsenide under drift are studied. It is found that the effects
Miah, M Idrish, Miah, Mohammad
core   +1 more source

Ion implantation damage in gallium arsenide crystals.

, 1975
Crystal damage produced by ion implantation in (110) cut gallium arsenide single crystals has been investigated using X-ray diffraction, reflection high energy electron diffraction (RHEED) and electron microscopy.
Tunkasiri, Tawee.
core  

Epitaxial growth of gallium arsenide with ammonium halides as transporting agents [PDF]

, 1964
Epitaxial growth of gallium arsenide with ammonium halides as transporting ...
Longini, R. L., Kim, H. B.
core  

Electronic structure simulation of gallium arsenide clusters [PDF]

, 2009
Semiconductor clusters have occupied the centre of scientific interest because of their unique electronic nature. Among the group III-V compound clusters, the gallium arsenide clusters have been the focus of this research due to their importance in ...
Musa, Nor Muniroh
core  

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells. [PDF]

Sci Rep, 2020
Ouyang Y, Liu X, Li H, Cui S, Yan H, Pan X.   +5 more
europepmc   +1 more source

Changes in low-frequency noise in p-n junctions at low temperatures

Технологія та конструювання в електронній апаратурі, 2004
The results of experimental studies of a gallium arsenide diode in the temperature range of 78–300 K are presented. It is proposed that, when designing equipment, the operational stability of semiconductor sensors in the low-temperature range be ...
A. G. Golovko
doaj  

INTERKONEKSI IC DIGITAL BERBAHAN GALLIUM ARSENIDE (GaAs)

Techne, 2011
Tata letak keping IC Digital berbahan GaAs memerlukan interkoneksi untuk keperluan konsumsi daya dan transmisi sinyal. Interkoneksi bahan GaAs perlu perhatian khusus karena transisi dengan kecepatan tinggi akan menghasilkan derau pada interkoneksi. Derau
Andreas Ardian Febrianto
doaj  

Negative longitudinal magnetoresistance in gallium arsenide quantum wells. [PDF]

Nat Commun, 2019
Xu J, Ma MK, Sultanov M, Xiao ZL, Wang YL, Jin D, Lyu YY, Zhang W, Pfeiffer LN, West KW, Baldwin KW, Shayegan M, Kwok WK.   +12 more
europepmc   +1 more source

Characterization of defects in gallium arsenide

, 1990
It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but ...
Mohapatra, YN, Kumar, Vikram
core  

A gallium arsenide hybrid-pixel counting detector for 100 keV cryo-electron microscopy. [PDF]

Commun Eng
Zambon P, Montemurro GV, Fernandez-Perez S, Schnyder R, Lehmann N, Sakhelashvili T, Burkhalter S, Meffert M, Jensen A, Würsch P, Jud PA, Dudina A, Kaspar S, Schulze-Briese C.   +13 more
europepmc   +1 more source