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Low-Level Laser Therapy for Gingival Inflammation in Children and Adolescents: A Narrative Review Based on In Vitro, In Vivo and Clinical Studies. [PDF]
Healthcare (Basel)Stancu MȘ +8 more
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Effects of photobiomodulation therapy on orthodontically induced inflammatory root resorption: a systematic review and meta-analysis. [PDF]
BMC Oral HealthZhang G +4 more
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Bioleaching of GaAs metal hydroxide sludge: a biohydrometallurgical alternative to conventional acid leaching. [PDF]
Front MicrobiolFritze MT +4 more
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Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
Toxicology and Applied Pharmacology, 2004Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
Akiyo Tanaka
exaly +3 more sources
Evaluation of the carcinogenicity of gallium arsenide
Critical Reviews in Toxicology, 2013Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings.
Samuel Cohen
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1993
This chapter is from the book Encyclopedia of Applied Physics. This 23 volume encyclopedia unites the concept of modern physics with their numerous technical applications. It covers modern technologies where most of the work is done by engineers, but where physics research is a necessary part of further developments.
R.M. Feenstra, Joseph A. Stroscio
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This chapter is from the book Encyclopedia of Applied Physics. This 23 volume encyclopedia unites the concept of modern physics with their numerous technical applications. It covers modern technologies where most of the work is done by engineers, but where physics research is a necessary part of further developments.
R.M. Feenstra, Joseph A. Stroscio
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Gallium arsenide phosphide-gallium arsenide heterojunction photodetectors
1966 International Electron Devices Meeting, 1966Conventional pn homojunction photodetectors when used as microwave modulation detectors suffer from a disadvantage inherent in its construction, namely, the need for a top layer either p- or n-type. To reduce the absorption of the incident light in this layer, the junction must be located close to the surface with consequent degradation due to surface ...
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Gallium-arsenide diffused diodes
1959 International Electron Devices Meeting, 1959Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Halpern, J. Lowen, R.H. Rediker
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